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doi: 10.11999/JEIT240294
摘要:
隨著對(duì)太空的探索的深入,人們發(fā)現(xiàn)應(yīng)用于航天領(lǐng)域的靜態(tài)隨機(jī)存取存儲(chǔ)器(SRAM)易受到高能粒子轟擊發(fā)生電節(jié)點(diǎn)翻轉(zhuǎn)(SEU)和多節(jié)點(diǎn)翻轉(zhuǎn)(SEMNU)。該文為解決SRAM的單粒子翻轉(zhuǎn)問(wèn)題提出一種16TSRAM單元可以用于SRAM的抗翻轉(zhuǎn)應(yīng)用,該單元,包含3個(gè)敏感節(jié)點(diǎn),使用金屬氧化物半導(dǎo)體(MOS)管堆疊結(jié)構(gòu),較大提高了單元的穩(wěn)定性。在65 nm CMOS工藝下仿真證明該單元可以解決SEU和SEMNU問(wèn)題。相比于SARP12T, LWS14T, SAR14T, RSP14T, EDP12T, SIS10T, MNRS16T的保持靜態(tài)噪聲容限(HSNM)分別提升了1.4%, 54.9%, 58.9%, 0.7%, 59.1%, 107.4%。相比于SARP12T, RH10T, SAR14T, RSP14T, S8N8P16T, EDP12T, SIS10T, MNRS16T的讀取靜態(tài)噪聲容限(RSNM)分別提升了94.3%, 31.4%, 90.3%, 8.9%, 71.5%, 90.4%, 90.3%。相較于SAR14T, RSP14T, EDP12T, RH12T, MNRS16T的保持功率(Hpwr)降低了12.4%, 16.9%, 13.1%, 50.1%。