摘要:
本文在改進型電荷控制模型基礎上,引進GSW速度場方程,推導出異質(zhì)結(jié)絕緣柵場效應晶體管(HIGFETs)的ID-VD-VG,IDS-VG,Gm,和CG等一系列靜態(tài)特性方程。計算結(jié)果與文獻實測值進行了比較,在VG2V,IDDS時兩者符合得甚好。本文討論了溫度對Vth的影響;器件的結(jié)構(gòu)參數(shù):柵長L、柵寬W，源電阻RS,GaAlAs厚度d, GaAs遷移率和溫度對Gm的影響。并指出了提高HIGFETs性能的可能途徑。
Abstract:
Based on improved charge conttrol model and combining GSW velocity-field equation, a series of analytical solutions for the static characteristics of HIGFETs such as TD-VD-VG,Gm and CG are derivel. The results of calculations are compared with experimental data reported in references, within the rang of VG2V, ID TDS, they agree very well. It is pionted out that two-lengrh model must be considered in the high field region due to greater leakage current between the gate and rhe drain. The effects of temperature on Vth, and the effects of gate length and width, temperature, GaAlAs thickness, source resistance, GaAs mobility on Gm are discussed. Possible approaches for improving performances of HIGFETs are pointed out according to the above analyses.
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