SiC表面氫化研究

羅小蓉; 張波; 李肇基; 龔敏

SiC表面氫化研究

羅小蓉^①;張波,
張波,
李肇基,
龔敏

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出版歷程
- 收稿日期: 2005-02-02
- 修回日期: 2005-07-08
- 刊出日期: 2006-11-19

Study on the Hydrogenation of SiC Surface

摘要

摘要: 該文提出6H-SiC ( 0001)/SiO2間過渡層的概念和過渡層結(jié)構(gòu)，通過分析過渡層與HF溶液的反應機理，建立濕化學處理中的SiC表面氫化模型。模型以氫鈍化SiC表面懸掛鍵，降低SiC表面的界面態(tài)密度，消除了費米能級釘扎，獲得理想的SiC表面。將此模型用于SiC/金屬接觸的SiC表面處理，在100℃以下制備了理想因子n=1.2~1.25的肖特基結(jié)和比接觸電阻＝510-3 cm2~710-3 cm2的SiC歐姆接觸，其優(yōu)點在于不僅避免了歐姆接觸800~1200℃的高溫合金，而且改善了肖特基接觸的電學特性。SiC表面模型與實驗結(jié)果吻合較好。
- 過渡層; 氫化; 界面態(tài); 費米能級釘扎; 理想因子
Abstract: The conception and the structure of transition layer of 6H-SiC (0001)/ SiO2 are proposed in this paper. The hydrogenation model of SiC surface is developed by analyzing the reaction mechanism of SiC surface and HF solution. The density of surface states is lowered to unpin the Fermi level because the hydrogen passivated dangling bonds of the surface. The ideal SiC surface is formed. The model is applied to treat SiC surface of the SiC/ metal contacts, Schottky junctions with ideality factor n=1.20~1.25 and Ohmic contacts with ＝510-3 cm2~710-3 cm2 are obtained under the condition of below 100℃. Its advantages lie in not only avoiding the annealing at 800~1200℃ for Ohmic contacts, but also improving the electrical performances of the Schottky barrier contacts. The hydrogenation model of SiC surface is good agreement with experiments.

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參考文獻(1)

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