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兩種面向宇航應(yīng)用的高可靠性抗輻射加固技術(shù)靜態(tài)隨機(jī)存儲(chǔ)器單元

閆愛(ài)斌 李坤 黃正峰 倪天明 徐輝

閆愛(ài)斌, 李坤, 黃正峰, 倪天明, 徐輝. 兩種面向宇航應(yīng)用的高可靠性抗輻射加固技術(shù)靜態(tài)隨機(jī)存儲(chǔ)器單元[J]. 電子與信息學(xué)報(bào), 2024, 46(10): 4072-4080. doi: 10.11999/JEIT240082
引用本文: 閆愛(ài)斌, 李坤, 黃正峰, 倪天明, 徐輝. 兩種面向宇航應(yīng)用的高可靠性抗輻射加固技術(shù)靜態(tài)隨機(jī)存儲(chǔ)器單元[J]. 電子與信息學(xué)報(bào), 2024, 46(10): 4072-4080. doi: 10.11999/JEIT240082
YAN Aibin, LI Kun, HUANG Zhengfeng, NI Tianming, XU Hui. Two Highly Reliable Radiation Hardened By Design Static Random Access Memory Cells for Aerospace Applications[J]. Journal of Electronics & Information Technology, 2024, 46(10): 4072-4080. doi: 10.11999/JEIT240082
Citation: YAN Aibin, LI Kun, HUANG Zhengfeng, NI Tianming, XU Hui. Two Highly Reliable Radiation Hardened By Design Static Random Access Memory Cells for Aerospace Applications[J]. Journal of Electronics & Information Technology, 2024, 46(10): 4072-4080. doi: 10.11999/JEIT240082

兩種面向宇航應(yīng)用的高可靠性抗輻射加固技術(shù)靜態(tài)隨機(jī)存儲(chǔ)器單元

doi: 10.11999/JEIT240082
基金項(xiàng)目: 國(guó)家自然科學(xué)基金(61974001)
詳細(xì)信息
    作者簡(jiǎn)介:

    閆愛(ài)斌:男,博士,教授,研究方向?yàn)閿?shù)字電路可靠性技術(shù)等

    李坤:男,碩士生,研究方向?yàn)镾RAM單元容錯(cuò)技術(shù)

    黃正峰:男,博士,教授,研究方向?yàn)閿?shù)字集成電路容錯(cuò)設(shè)計(jì)等

    倪天明:男,博士,教授,研究方向?yàn)閿?shù)字集成電路可測(cè)性設(shè)計(jì)等

    徐輝:男,博士,教授,研究方向?yàn)榭尚庞?jì)算與人工智能等

    通訊作者:

    徐輝 austxuhui@163.com

  • 中圖分類號(hào): TN43

Two Highly Reliable Radiation Hardened By Design Static Random Access Memory Cells for Aerospace Applications

Funds: The National Natural Science Foundation of China (61974001)
  • 摘要: CMOS尺寸的大幅縮小引發(fā)電路可靠性問(wèn)題。該文介紹了兩種高可靠的基于設(shè)計(jì)的抗輻射加固(RHBD)10T和12T抗輻射加固技術(shù)(SRAM)單元,它們可以防護(hù)單節(jié)點(diǎn)翻轉(zhuǎn)(SNU)和雙節(jié)點(diǎn)翻轉(zhuǎn)(DNU)。10T單元主要由兩個(gè)交叉耦合的輸入分離反相器組成,該單元可以通過(guò)其內(nèi)部節(jié)點(diǎn)之間的反饋機(jī)制穩(wěn)定地保持存儲(chǔ)的值。由于僅使用少量晶體管,因此其在面積和功耗方面開(kāi)銷也較低?;?0T單元,提出了使用4個(gè)并行存取訪問(wèn)管的12T單元。與10T單元相比,12T單元的讀/寫訪問(wèn)時(shí)間更短,且具有相同的容錯(cuò)能力。仿真結(jié)果表明,所提單元可以從任意SNU和部分DNU中恢復(fù)。此外,與先進(jìn)的加固SRAM單元相比,所提RHBD 12T單元平均可以節(jié)省16.8%的寫訪問(wèn)時(shí)間、56.4%的讀訪問(wèn)時(shí)間和10.2%的功耗,而平均犧牲了5.32%的硅面積。
  • 圖  1  所提RHBD10T單元電路圖

    圖  2  所提RHBD10T單元版圖

    圖  3  所提RHBD10T單元正常操作的仿真結(jié)果

    圖  4  所提 RHBD10T單元的SNU自恢復(fù)仿真結(jié)果

    圖  5  所提 RHBD10T 單元的 DNU 的仿真結(jié)果

    圖  6  所提RHBD12T單元電路圖

    圖  7  所提 RHBD12T單元的版圖

    圖  8  溫度與電壓變化對(duì) SRAM 設(shè)計(jì)的 RAT,WAT 和功耗影響的仿真結(jié)果

    圖  9  闕值電壓和溝道長(zhǎng)度變化對(duì)SRAM設(shè)計(jì)的RAT, WAT和功耗的影響的仿真結(jié)果

    圖  10  電壓0.8 V下的SNM比較

    表  1  未加固/加固 SRAM 單元之間的可靠性和開(kāi)銷比較結(jié)果

    SRAM 6T NASA 13T RHD 12T QCCM 12T QUCCE 12T DNU SRM We-Quatro Yan 14T QCCM 10T RHSC 12T SAR 14T RHBD 10T RHBD 12T
    文獻(xiàn) [18] [19] [20] [21] [22] [23] [25] [20] [26] [27] 本文 本文
    SNUR × × × × × × ×
    #DHP 0 0 2 1 0 16 2 0 1 0 0 4 4
    RAT (ps) 26.55 128.67 25.72 12.99 13.02 6.63 12.99 51.2 18.20 36.89 32.92 25.88 11.21
    WAT (ps) 4.11 18.2 5.06 4.22 4.31 4.71 4.38 4.09 23.21 3.83 4.84 7.11 4.21
    功耗(nW) 5.24 18.92 10.38 10.43 10.43 20.86 10.43 7.78 11.45 8.93 10.6 9.02 9.32
    10–3×面積(nm2) 4.35 9.07 8.27 8.71 8.71 17.42 8.71 10.25 7.79 8.71 12.44 7.30 8.71
    下載: 導(dǎo)出CSV
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  • 收稿日期:  2024-02-04
  • 修回日期:  2024-09-11
  • 網(wǎng)絡(luò)出版日期:  2024-09-16
  • 刊出日期:  2024-10-30

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