一種用于K波段空間行波管模擬預(yù)失真電路的設(shè)計方法
doi: 10.11999/JEIT221181
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中國科學(xué)院空天信息創(chuàng)新研究院 北京 100190
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中國科學(xué)院大學(xué) 北京 100049
A Design Method for Analog Predistortion Circuit of K-band TWT
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Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing 100190, China
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University of Chinese Academy of Sciences, Beijing 100049, China
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摘要: 空間行波管(TWT)預(yù)失真電路小型化、輕量化要求使得電路調(diào)試難度變大,迫切需要一種預(yù)失真電路精確仿真及設(shè)計方法來指導(dǎo)產(chǎn)品設(shè)計。該文在分析肖特基二極管等效電路模型基礎(chǔ)上選擇二極管MA4E2039作為非線性發(fā)生器件,并建立了MA4E2039的二極管仿真模型。之后通過分析反射式預(yù)失真電路結(jié)構(gòu),獲得了影響電路性能的關(guān)鍵參數(shù),并在元器件和版圖聯(lián)合仿真階段對這些關(guān)鍵參數(shù)進(jìn)行精確仿真。最后對依據(jù)仿真結(jié)果進(jìn)行加工的預(yù)失真電路進(jìn)行測試,發(fā)現(xiàn)仿真結(jié)果和電路實測結(jié)果偏差小于15%,將預(yù)失真電路與K波段行波管放大器級聯(lián)實現(xiàn)在輸入回退4 dB時3階交調(diào)達(dá)到23.77 dBc,實現(xiàn)了行波管的線性化??梢娫摲椒軌蛴糜谥笇?dǎo)空間行波管預(yù)失真電路設(shè)計,幫助提高產(chǎn)品開發(fā)周期,對于預(yù)失真電路的小型化設(shè)計也有重要指導(dǎo)意義。Abstract: The requirement of miniaturization and lightweight of space Travelling Wave Tube (TWT) predistortion circuit makes the circuit debugging more difficult. Therefore, an accurate simulation and design method of predistortion circuit is urgently needed to guide the product design. Based on the analysis of Schottky diode equivalent circuit model, the diode MA4E2039 is selected as a nonlinear generator, and the diode simulation model of MA4E2039 is established. Then, the key parameters affecting the performance of the circuit are obtained by analyzing the structure of the reflective predistortion circuit, and these key parameters are simulated accurately in the co-simulation stage of components and layout. Finally, the pre-distortion circuit processed according to the simulation results is tested, and it is found that the deviation between the simulation results and the measured results is less than 15%. By cascading the predistortion circuit with the K-band TWTA, the third-order intermodulation reaches 23.77 dBc while the IBO=4 dB. Therefore, this method can be used to guide the design of pre-distortion circuit of space TWT, help to improve the product development cycle, and also has important guiding significance for the miniaturization design of pre-distortion circuit.
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表 1 MA4E2039單個二極管本征模型關(guān)鍵參數(shù)
參數(shù) 單位 含義 值 IS A 反向飽和電流 9.5e-14 RS $\Omega $ 串聯(lián)電阻 5.1 N – 發(fā)射系數(shù) 1.16 CJ0 pF 零偏結(jié)電容 0.025 M – 分級系數(shù) 0.5 EG eV 能帶寬度 1.43 FC – 正偏耗盡層電容系數(shù) 0.5 TT s 渡越時間 1e-11 VJ V 結(jié)電勢 0.7 BV V 反向擊穿電壓 7 IBV A 反向擊穿電壓下電流 1e-5 XTI – 飽和電流溫度系數(shù) 2 下載: 導(dǎo)出CSV
表 2 預(yù)失真電路仿真及實測指標(biāo)比對
項目 20.2 GHz 20.7 GHz 21.2 GHz 偏差(%) 仿真 實測 仿真 實測 仿真 實測 飽和輸入功率(dBm) 3.50 3.50 3.50 3.50 3.50 3.50 / 直流電壓(V) 1.75 1.75 1.75 1.75 1.75 1.75 / 增益擴張(dB) 2.28 2.60 2.86 2.81 3.60 3.17 ≤12 相位擴張(°) 29.63 33.16 34.00 34.80 36.12 34.84 ≤12 飽和增益(dB) –7.81 –9.13 –7.96 –8.92 –8.00 –8.94 ≤15 小信號增益(dB) –10.09 –11.73 –10.82 –11.73 –11.60 –12.11 ≤13 下載: 導(dǎo)出CSV
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