面向可見(jiàn)光通信的硅基InGaN/GaN多量子阱多口分路器光子集成芯片

李欣; 王徐; 李蕓; 沙源清; 蔣成偉; 王永進(jìn)

doi:10.11999/JEIT210953

面向可見(jiàn)光通信的硅基InGaN/GaN多量子阱多口分路器光子集成芯片

doi: 10.11999/JEIT210953

李欣^{1, 2, ,},
王徐¹,
李蕓¹,
沙源清¹,
蔣成偉¹,
王永進(jìn)¹

1.
南京郵電大學(xué)通信與信息工程學(xué)院南京 210003
2.
南京郵電大學(xué)寬帶無(wú)線通信與傳感網(wǎng)技術(shù)教育部重點(diǎn)實(shí)驗(yàn)室南京 210003

基金項(xiàng)目: 中國(guó)博士后基金 (2018M640508)，南京郵電大學(xué)1311人才計(jì)劃(1311)，南京郵電大學(xué)寬帶無(wú)線通信與傳感網(wǎng)技術(shù)教育部重點(diǎn)實(shí)驗(yàn)室開(kāi)放研究基金(JZNY202109)

詳細(xì)信息

作者簡(jiǎn)介:
李欣：女，1984年生，副教授，研究方向?yàn)榭梢?jiàn)光通信及氮化鎵光電子器件

王徐：女，1998年生，碩士生，研究方向?yàn)榭梢?jiàn)光通信及氮化物光電子器件

李蕓：女，1998年生，碩士生，研究方向?yàn)榭梢?jiàn)光通信及氮化物光電子器件

沙源清：男，1997年生，碩士生，研究方向?yàn)榭梢?jiàn)光通信及氮化物光電子器件

蔣成偉：男，1997年生，碩士生，研究方向?yàn)榭梢?jiàn)光通信及氮化物光電子器件

王永進(jìn)：男，1977年生，教授，研究方向?yàn)橄乱淮鸁o(wú)線通信、新型光電子器件、信息功能材料及物聯(lián)網(wǎng)

通訊作者:
李欣　lixin1984@njupt.edu.cn

中圖分類號(hào): TN256; TN929.1
計(jì)量
- 文章訪問(wèn)數(shù): 998
- HTML全文瀏覽量: 736
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- 被引次數(shù): 0
出版歷程
- 收稿日期: 2021-09-08
- 修回日期: 2022-04-22
- 網(wǎng)絡(luò)出版日期: 2022-04-28
- 刊出日期: 2022-08-17

Silicon-based InGaN/GaN Multi-quantum Wells Multi-port Splitter Photonic Integrated Chip for Visible Light Communication

1.
College of Telecommunications and Information, Nanjing University of Posts and Telecommunications, Nanjing 210003, China
2.
Key Laboratory of Broadband Wireless Communication and Sensor Network Technology, Nanjing University of Posts and Telecommunications, Ministry of Education, Nanjing 210003, China

Funds: China Postdoctoral Science Foundation Funded Project (2018M640508), The Talent Program of Nanjing University of Posts and Telecommunications (1311), The Open Research Fund of Key Laboratory of Broadband Wireless Communication and Sensor Network Technology (Nanjing University of Posts and Telecommunications), Ministry of Education (JZNY202109)

摘要

摘要: 為研究面向可見(jiàn)光通信的多功能光子集成芯片，實(shí)現(xiàn)可見(jiàn)光信號(hào)發(fā)射、探測(cè)、傳輸和功率分配的一體化的復(fù)合功能，該文提出一種基于硅基InGaN/GaN多量子阱材料的微型發(fā)光二極管(LED)多口分路器結(jié)構(gòu)的光子集成芯片，對(duì)集成芯片進(jìn)行了形貌、光電特性和可見(jiàn)光通信測(cè)試等多方面表征，實(shí)現(xiàn)了對(duì)可見(jiàn)光信號(hào)的有效傳輸和不同比例的多口功率分路，并對(duì)分路器不同端口的出射光強(qiáng)進(jìn)行量化處理，最后，利用信號(hào)發(fā)生器在微型LED光源發(fā)射端加載300 kHz的矩形波電信號(hào)，收集分路器末端發(fā)射的調(diào)制可見(jiàn)光信號(hào)，輸入/接收信號(hào)的波形變化趨勢(shì)一致，說(shuō)明該光子集成芯片可實(shí)現(xiàn)有效的可見(jiàn)光通信。該研究的主要目的是嘗試性將可見(jiàn)光波段的光源和光電探測(cè)器集成在氮化物晶圓上，為可見(jiàn)光通信的全光網(wǎng)絡(luò)的可見(jiàn)光信號(hào)片上集成式處理提供新的研究思路和方案，為發(fā)展面向可見(jiàn)光通信網(wǎng)絡(luò)需求的復(fù)合功能光子集成芯片終端提供了更多可能性。
- 光子集成芯片 /
- 可見(jiàn)光通信 /
- 氮化鎵 /
- 發(fā)光二極管 /
- 多口分路器
Abstract: In order to study the multi-functional photon integrated chip for visible light communication and realize the integrated function of visible light signal emission, detection, transmission and power distribution, a miniature Light Emitting Diode(LED) with splitter structure based on silicon-based InGaN/GaN multiple quantum well material is proposed in this paper. The photon integrated chip is characterized in many aspects, such as morphology, optoelectronic characteristics and visible light communication test. The effective transmission of visible light signal and different proportion of multi-port power shunt are realized, and the output light intensity of different ports of the splitter is quantified. Finally, the rectangular wave signal of 300 kHz is loaded at the emitter end of the miniature LED light source by the signal generator, and the modulated visible light signal emitted at the end of the splitter is collected. The waveform change trend of the input / receive signal is the same. It shows that the photonic integrated chip can achieve effective visible light communication. The main purpose of this study is to try to integrate visible light sources and photodetectors on nitride wafers, so as to provide new research ideas and schemes for on-chip integrated processing of visible light signals in all-optical networks of visible light communications. It provides more possibilities for the development of multi-function photon integrated chip terminals for visible light communication networks.
- Photonics integrated chips /
- Visible light communication /
- Gallium nitride /
- Light Emitting Diodes(LED) /
- Multi-port splitters

HTML全文

圖 1 可見(jiàn)光信號(hào)在分路器結(jié)構(gòu)中傳輸情況的仿真模型及仿真分析結(jié)果

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圖 2 硅基InGaN/GaN多量子阱多口分路器光子集成芯片示意圖

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圖 3 硅基InGaN/GaN多量子阱多口分路器光子集成芯片加工工藝流程圖

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圖 4 硅基InGaN/GaN多量子阱多口分路器光子集成芯片的光學(xué)顯微鏡圖

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圖 5 多口分路器的掃描電子顯微鏡圖

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圖 6 多口分路器關(guān)鍵結(jié)構(gòu)的原子力顯微鏡圖

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圖 7 發(fā)光器件的電致發(fā)光總光強(qiáng)

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圖 8 硅基InGaN/GaN多量子阱多口分路器光子集成芯片在1～10 mA注入電流下的工作狀態(tài)

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圖 9 隨注入電流變化的分路器不同端口的出射光強(qiáng)曲線

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圖 10 光子集成芯片可見(jiàn)光通信測(cè)試的輸入輸出信號(hào)波形圖

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表 1 本研究與部分已發(fā)表光子集成芯片指標(biāo)對(duì)比

包含器件	功能	光信號(hào)波長(zhǎng)	年份
無(wú)源光子器件	光功率分配	近紅外光	2021^[13], 2018^[22]
無(wú)源光子器件	光信號(hào)傳輸	1550 nm	2021^[16], 2019^[17]
無(wú)源光子器件	光信號(hào)傳輸	633 nm	2016^[20]
微型LED光源	光信號(hào)發(fā)射	450 nm	2014^[8]
有源無(wú)源光子器件	發(fā)射、探測(cè)、傳輸、功率分配	445 nm	2022(本文)

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表 2 分路器不同端口的出射光強(qiáng)

	電流(mA)
	3	4	5	6	7	8	9	10
1號(hào)端口光強(qiáng)(a.u.)	1854.1	4065.9	4580.9	6455.0	9363.0	12213.1	13929.8	14582.0
2號(hào)端口光強(qiáng)(a.u.)	330.1	922.0	797.9	1102.0	1964.0	2873.0	3021.0	3383.0
3號(hào)端口光強(qiáng)(a.u.)	147.1	481.0	215.1	795.9	1944.0	1684.0	2025.0	1776.0

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