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荷控憶阻器記憶衰退的寄生效應

沈怡然 李付鵬 王光義

沈怡然, 李付鵬, 王光義. 荷控憶阻器記憶衰退的寄生效應[J]. 電子與信息學報, 2020, 42(4): 844-850. doi: 10.11999/JEIT190865
引用本文: 沈怡然, 李付鵬, 王光義. 荷控憶阻器記憶衰退的寄生效應[J]. 電子與信息學報, 2020, 42(4): 844-850. doi: 10.11999/JEIT190865
Yiran SHEN, Fupeng LI, Guangyi WANG. The Role of Parasitic Elements in Fading Memory of A Charge Controlled Memristor[J]. Journal of Electronics & Information Technology, 2020, 42(4): 844-850. doi: 10.11999/JEIT190865
Citation: Yiran SHEN, Fupeng LI, Guangyi WANG. The Role of Parasitic Elements in Fading Memory of A Charge Controlled Memristor[J]. Journal of Electronics & Information Technology, 2020, 42(4): 844-850. doi: 10.11999/JEIT190865

荷控憶阻器記憶衰退的寄生效應

doi: 10.11999/JEIT190865
基金項目: 國家自然科學基金(61771176,61801154)
詳細信息
    作者簡介:

    沈怡然:男,1979年生,實驗師,研究方向為非線性電路與系統(tǒng)

    李付鵬:男,1986年生,助理實驗師,研究方向為非線性電路與系統(tǒng)

    王光義:男,1957年生,教授,研究方向為非線性電路與系統(tǒng)

    通訊作者:

    李付鵬 lfp_99@hdu.edu.cn

  • 中圖分類號: TN601

The Role of Parasitic Elements in Fading Memory of A Charge Controlled Memristor

Funds: The National Natural Science Foundation of China(61771176, 61801154)
  • 摘要: 荷控憶阻器在寄生元件存在的情況下,可能發(fā)生記憶衰退現(xiàn)象。該文采用憶阻器動力學路線圖和仿真的方法,研究了憶阻器寄生電阻和寄生電容對其動力學特性的影響。理論和仿真分析發(fā)現(xiàn),理想荷控(流控)憶阻器在直流和交流激勵下,寄生電阻或寄生電容單獨存在時不發(fā)生記憶衰退現(xiàn)象,但在寄生電阻和寄生電容同時存在的情況下會發(fā)生記憶衰退,其機理是寄生元件形成放電通路,從而導致荷控憶阻器產(chǎn)生了記憶衰退。
  • 圖  1  記憶衰退概念示意圖

    圖  2  理想荷控憶阻器DRM

    圖  3  理想荷控憶阻器在不同初值條件下的DC響應

    圖  4  理想荷控憶阻器在不同初值條件下的AC響應

    圖  5  雙音測試和三角波測試

    圖  6  理想荷控憶阻器和寄生電阻

    圖  7  考慮寄生電阻后的DRM

    圖  8  理想荷控憶阻器和寄生電容

    圖  9  寄生電容條件下憶阻系統(tǒng)的DC和AC響應

    圖  10  考慮寄生電阻和寄生電容時的理想荷控憶阻器

    圖  11  寄生電阻和電容同時存在時憶阻系統(tǒng)的DC和AC響應

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出版歷程
  • 收稿日期:  2019-11-01
  • 修回日期:  2019-12-26
  • 網(wǎng)絡出版日期:  2020-01-06
  • 刊出日期:  2020-06-04

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