硅基毫米波雷達芯片研究現(xiàn)狀與發(fā)展

賈海昆; 池保勇

doi:10.11999/JEIT190666

硅基毫米波雷達芯片研究現(xiàn)狀與發(fā)展

doi: 10.11999/JEIT190666

賈海昆,
池保勇^,

清華大學(xué)微電子所北京 100084

基金項目: 北京市科技計劃(Z191100007519005)

詳細(xì)信息

作者簡介:
賈海昆：男，1987年生，助理教授，研究方向為毫米波集成電路設(shè)計

池保勇：男，1976年生，教授，研究方向為射頻與毫米波集成電路設(shè)計

通訊作者:
池保勇　chibylxc@tsinghua.edu.cn

中圖分類號: TN958; TN43
計量
- 文章訪問數(shù): 9848
- HTML全文瀏覽量: 3408
- PDF下載量: 729
- 被引次數(shù): 0
出版歷程
- 收稿日期: 2019-09-02
- 修回日期: 2019-12-04
- 網(wǎng)絡(luò)出版日期: 2019-12-10
- 刊出日期: 2020-01-21

The Status and Trends of Silicon-based Millimeter-wave Radar SoCs

Haikun JIA,
Baoyong CHI^,

Institution of Microelectronics, Tsinghua University, Beijing 100084, China

Funds: Beijing Science and Technology Program of China (Z191100007519005)

摘要

摘要:
毫米波雷達具備全天候復(fù)雜環(huán)境下的工作能力，在汽車?yán)走_、智能機器人等方面有廣泛的應(yīng)用。同時，隨著半導(dǎo)體技術(shù)的快速發(fā)展，硅基工藝晶體管的截止頻率提升，硅基毫米波雷達成為研究熱點，大量的工作從系統(tǒng)設(shè)計、電路設(shè)計等方面提高毫米波雷達的性能。該文從系統(tǒng)和核心電路等方面對硅基毫米波雷達芯片的研究現(xiàn)狀和發(fā)展趨勢進行綜述。
- 毫米波雷達 /
- 硅基 /
- 芯片
Abstract:
The millimeter wave radar is robust against various environments such as rain, fog, snow. It has huge potentials in applications such as automotive radars, intelligent robots. At the same time, the rapid development of silicon technology improves the cut off frequency of the transistor, which make it possible to implement low cost millimeter wave radar SoCs in silicon. Recently a lot of research is dedicated to improve the performance of the silicon based millimeter wave SoCs from both system level and key building blocks level. The current research status and future trends of the silicon based millimeter wave radar SoCs are reviewed in this paper.
- Millimeter-Wave Radar /
- Silicon /
- SoCs

HTML全文

圖 1 毫米波汽車?yán)走_和谷歌Soli項目^[14]

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圖 2 毫米波雷達系統(tǒng)基本結(jié)構(gòu)

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圖 3 FMCW雷達探測靜止目標(biāo)和運動目標(biāo)的原理示意圖

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圖 4 基本FMCW毫米波雷達收發(fā)機前端芯片結(jié)構(gòu)圖

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圖 5 文獻[34]中基于DSM小數(shù)型鎖相環(huán)的FMCW信號發(fā)生器

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圖 6 當(dāng)鎖相環(huán)建立時間過快時的輸出FMCW頻率波形

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圖 7 全數(shù)字鎖相環(huán)用于毫米波FMCW信號產(chǎn)生^[37]

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圖 8 合成型功率放大器

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圖 9 4種4階匹配網(wǎng)絡(luò)^[66]

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圖 10 4種4階匹配網(wǎng)絡(luò)的頻率響應(yīng)對比^[66]

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圖 11 基于變壓器耦合諧振腔的特性^[67]

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圖 12 理想兩單元相控陣不同波束指向的雷達方向圖

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圖 13 片上傳輸線與鍵合線協(xié)同設(shè)計以提高其帶寬^[81]

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圖 14 工作在60 GHz的鍵合線天線，增益為4 dBi^[80]

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圖 15 文獻[82]倒封裝

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圖 16 封裝天線示意圖^[84]

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圖 17 在封裝中集成了2×2的接收天線陣列以及1×2的發(fā)射天線陣列^[13]

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圖 18 MIMO天線陣列配置示意圖

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圖 19 2維MIMO天線陣列配置示意圖

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圖 20 兩點調(diào)制基本原理^[39]

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圖 21 采用LMS相關(guān)算法校準(zhǔn)高通支路與低通支路的匹配^[39]

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表 1 FMCW信號發(fā)生器性能匯總

文獻編號	[5]	[27]	[28]	[33]	[34]	[37]	[42]	[43]
工藝	65 nm CMOS,	65 nm CMOS,	65 nm CMOS,	90 nm CMOS,	65 nm CMOS,	65 nm CMOS,	65 nm CMOS,	40 nm CMOS,
結(jié)構(gòu)	DSM小數(shù)環(huán)	DSM小數(shù)環(huán)	DSM小數(shù)環(huán)	DDFS整數(shù)環(huán)	DSM小數(shù)環(huán)	全數(shù)字小數(shù)環(huán)	混合信號小數(shù)環(huán)	CTDSM小數(shù)環(huán)
頻率(GHz)	76.0	76～81	77	77	76	60	83	37
掃頻帶寬(GHz)	0.700	0.500	1.930	0.614	0.700	1.220	1.500	0.500
RMS頻差(kHz)	64	±961	674	>1000	<73	117	<180	820
功耗(mW)	73.0	320.0	N/A	101.0	51.4	48.0	152.0	68.0
面積(mm²)	N/A	2.74	0.44	～0.50	0.29	0.72	1.70	0.18

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表 2 硅基毫米波功率放大器性能匯總

文獻編號	[49]	[50]	[51]	[52]	[53]	[54]	[55]	[56]	[57]
工藝	45 nm CMOS SOI	45 nm CMOS SOI	65 nm CMOS	28 nm UTBB FD-SOI	40 nm CMOS	65 nm CMOS	40 nm CMOS	0.13 μm SiGe BiCMOS	45 nm CMOS SOI
結(jié)構(gòu)	堆疊	堆疊	堆疊	功率合成	功率合成	功率合成	功率合成	功率合成	功率合成
頻率(GHz)	41.0	45.0	60.0	60.0	60.0	60.0	70.3～85.5	42.0	60.0
電源電壓(V)	5.0	2.7	2.5	1.0	1.0	1.0	0.9	4.0/2.4	2.2
P_SAT(dBm)	21.6	18.6～19.4	17.6	18.9	17.4	17.7	20.9	28.4	30.1
PAE_MAX(%)	25.1	32.0～33.9	20.4	17.7	28.5	11.1	22.3	10.0	20.8
增益(dB)	8.9	9.5	23.5	35.0	21.2	19.2	18.1	18.5	24.7
面積(mm²)	0.300	0.300	0.240	0.162	0.074	0.830	0.190	5.550	6.600

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