一種適于縫隙等表面缺陷類目標(biāo)的評(píng)估方法
doi: 10.11999/JEIT180378
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1.
北京航空航天大學(xué)電子信息工程學(xué)院 ??北京 ??100191
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2.
航空工業(yè)第一飛機(jī)設(shè)計(jì)研究院 ??西安 ??710089
Assessment Method for Gaps and Other Surface Defects
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1.
School of Electronics and Information Engineering, Beihang University, Beijing 100191, China
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2.
Avic The First Aircraft Institute, Xi’an 710089, China
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摘要:
縫隙等表面缺陷類目標(biāo)對(duì)飛行器的隱身性能具有重要影響。根據(jù)縫隙等表面缺陷類目標(biāo)的散射機(jī)理,該文提出一種載體背景對(duì)消方法,用于評(píng)估表面缺陷類目標(biāo)散射。該方法將載體作為目標(biāo)背景的一部分,通過矢量場相減的方式對(duì)消掉載體的自身散射影響,特別是載體強(qiáng)散射角域的散射影響,從而獲得了全角域范圍內(nèi)表面缺陷類目標(biāo)的散射特性數(shù)據(jù),解決了使用常規(guī)方法目標(biāo)受載體影響無法獲得完整散射特性的問題。通過數(shù)值計(jì)算和實(shí)驗(yàn)測量的結(jié)果對(duì)比表明:該方法可以對(duì)缺陷類目標(biāo)的電磁散射特性進(jìn)行有效評(píng)估。對(duì)消后載體散射得到了極大程度的降低,有效提高了缺陷類目標(biāo)的計(jì)算或測量精度;同時(shí)由于排除載體自身散射的影響,避免了對(duì)載體尺寸、超低散射特性的要求,有效降低了載體的加工設(shè)計(jì)成本。
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關(guān)鍵詞:
- 雷達(dá)散射截面 /
- 矢量對(duì)消 /
- 電磁缺陷 /
- 數(shù)值計(jì)算 /
- 實(shí)驗(yàn)測量
Abstract:Surface defects such as gaps have a significant impact on the stealth performance of the aircraft. According to the scattering mechanism of surface defects such as gaps, a method of evaluating the surface defect targets based on vector cancellation is proposed. The carrier is regarded as the target background and is subtracted the scattering effect of the carrier, especially the strong scattering angle of the carrier, and then the scattering characteristic data of the surface defect class target in the whole angle range are obtained, which solves the problem that the complete scattering characteristic can not be obtained using the conventional method. The comparison between the numerical calculation and the experimental results shows that the vector cancellation method can effectively evaluate the electromagnetic scattering characteristics of defective targets. After vector cancellation, the scattering of the carrier is greatly reduced, and the calculation or measurement accuracy of the defective target is effectively improved. At the same time, due to reducing the influence of the scattering of the carrier itself, this method avoids the requirement of the carrier size and ultra-low scattering characteristics, and reduces effectively the processing cost of the carrier.
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