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低軸間耦合的MEMS三維電場傳感器

凌必赟 彭春榮 任仁 儲昭志 張洲威 雷虎成 夏善紅

凌必赟, 彭春榮, 任仁, 儲昭志, 張洲威, 雷虎成, 夏善紅. 低軸間耦合的MEMS三維電場傳感器[J]. 電子與信息學(xué)報(bào), 2018, 40(8): 1934-1940. doi: 10.11999/JEIT171188
引用本文: 凌必赟, 彭春榮, 任仁, 儲昭志, 張洲威, 雷虎成, 夏善紅. 低軸間耦合的MEMS三維電場傳感器[J]. 電子與信息學(xué)報(bào), 2018, 40(8): 1934-1940. doi: 10.11999/JEIT171188
Biyun LING, Chunrong PENG, Ren REN, Zhaozhi CHU, Zhouwei ZHANG, Hucheng LEI, Shanhong XIA. MEMS-based Three-dimensional Electric Field Sensor with Low Cross-axis Coupling Interference[J]. Journal of Electronics & Information Technology, 2018, 40(8): 1934-1940. doi: 10.11999/JEIT171188
Citation: Biyun LING, Chunrong PENG, Ren REN, Zhaozhi CHU, Zhouwei ZHANG, Hucheng LEI, Shanhong XIA. MEMS-based Three-dimensional Electric Field Sensor with Low Cross-axis Coupling Interference[J]. Journal of Electronics & Information Technology, 2018, 40(8): 1934-1940. doi: 10.11999/JEIT171188

低軸間耦合的MEMS三維電場傳感器

doi: 10.11999/JEIT171188
基金項(xiàng)目: 國家自然科學(xué)基金(61327810),國家863計(jì)劃項(xiàng)目(2015AA042602),中國科學(xué)院創(chuàng)新面上基金(CXJJ-17-M151)
詳細(xì)信息
    作者簡介:

    凌必赟:男,1990年生,博士生,研究方向?yàn)镸EMS 3維電場傳感器

    彭春榮:男,1979年生,博士,副研究員,研究方向?yàn)镸EMS電場傳感器及系統(tǒng)

    任仁:男,1982年生,博士,副研究員,研究方向?yàn)镸EMS電場傳感器標(biāo)定和檢測系統(tǒng)

    儲昭志:男,1990年生,博士生,研究方向?yàn)镸EMS電場傳感器及制備技術(shù)

    張洲威:男,1993年生,博士生,研究方向?yàn)殪o電探測技術(shù)

    雷虎成:男,1993年生,博士生,研究方向?yàn)楦哽`敏MEMS電場傳感器

    夏善紅:女,1958年生,博士,研究員,研究方向?yàn)槲⒓{傳感器與微系統(tǒng)技術(shù)

    通訊作者:

    夏善紅 ? shxia@mail.ie.ac.cn

  • 中圖分類號: TP212

MEMS-based Three-dimensional Electric Field Sensor with Low Cross-axis Coupling Interference

Funds: The National Natural Science Foundation of China (61327810), The National 863 Program of China (2015AA042602), Chinese Academy of Sciences Project (CXJJ-17-M151)
  • 摘要: 軸間耦合干擾是影響3維電場傳感器測量準(zhǔn)確性的重要因素。該文提出了一種低耦合干擾的MEMS 1維電場敏感芯片,并將3個(gè)上述的芯片正交組合研制出一款低軸間耦合的MEMS 3維電場傳感器。不同于已見報(bào)道的測量垂直方向電場分量的MEMS 1維電場敏感芯片,該文提出的芯片采用軸對稱設(shè)計(jì),在差分電路的配合下能夠測量垂直于對稱軸方向的面內(nèi)電場分量,并能夠消除正交于測量軸方向的電場分量的耦合干擾。該MEMS 3維電場傳感器具尺寸小和集成度高等優(yōu)點(diǎn)。實(shí)驗(yàn)結(jié)果表明在0~120 kV/m電場強(qiáng)度范圍內(nèi),該MEMS 3維電場傳感器的軸間耦合靈敏度小于3.48%,3維電場測量誤差小于7.13%。
  • 圖  1  1 維電場敏感芯片示意圖

    圖  2  1 維電場敏感芯片的仿真模型

    圖  3  1 維電場敏感芯片對不同方向電場的仿真結(jié)果

    圖  4  1 維電場敏感芯片的微加工工藝流程

    圖  5  1 維電場敏感芯片掃描電鏡照片

    圖  6  MEMS 3 維電場傳感器的實(shí)物圖

    圖  7  MEMS 3 維電場傳感器測試標(biāo)定裝置

    圖  8  MEMS 3維電場傳感器的標(biāo)定曲線

    表  1  1 維電場敏感芯片的關(guān)鍵參數(shù)

    結(jié)構(gòu)參數(shù) 參數(shù)值
    感應(yīng)電極寬度wsn 8 μm
    屏蔽電極寬度wsh 10 μm
    感應(yīng)電極與屏蔽電極的間距(平衡位置)g 15 μm
    相鄰的兩個(gè)感應(yīng)電極的間距W 95 μm
    感應(yīng)電極長度Lsn 1030 μm
    屏蔽電極長度Lsh 1045 μm
    結(jié)構(gòu)厚度 $\tau $ 25 μm
    襯底厚度h 300 μm
    感應(yīng)電極數(shù)量Ne 14×2
    梳齒數(shù)量Nd 84×20
    諧振結(jié)構(gòu)質(zhì)量meff 4.4×10–5 g
    等效彈性系數(shù)kq 11.3 N/m
    下載: 導(dǎo)出CSV

    表  2  X軸,Y軸和Z軸1維電場敏感芯片的靈敏度

    電場方向 X軸1維電場敏感芯片的靈敏度
    (mV·m/kV)
    Y軸1維電場敏感芯片的靈敏度
    (mV·m/kV)
    Z軸1維電場敏感芯片的靈敏度
    (mV·m/kV)
    沿X 0.293 0.001 0.008
    沿Y 0.011 0.316 0.007
    沿Z 0.008 0 0.287
    下載: 導(dǎo)出CSV

    表  3  3 維電場傳感器在空間作不同角旋轉(zhuǎn)的輸出與計(jì)算電場

    旋轉(zhuǎn)角度 施加電場(kV/m) X軸1維電場敏感芯片
    的輸出(mV)
    Y軸1維電場敏感芯片
    的輸出(mV)
    Z軸1維電場敏感芯片
    的輸出(mV)
    合成電場(kV/m) 誤差(%)
    $\theta $1 50 0.01 8.67 12.08 49.77 0.46
    100 0.01 17.51 24.35 100.40 0.40
    $\theta $2 50 0.01 13.97 6.86 49.84 0.32
    100 0.04 27.74 13.99 99.56 0.44
    $\theta $3 50 0.03 –10.08 –11.63 51.08 2.16
    100 0.05 –20.50 –22.84 101.67 1.67
    $\theta $4 50 2.56 –13.02 8.57 52.21 4.42
    100 5.22 –26.73 15.99 104.02 4.02
    $\theta $5 50 –8.67 9.77 8.49 53.30 6.60
    100 –16.94 19.32 17.84 107.13 7.13
    下載: 導(dǎo)出CSV
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  • 收稿日期:  2017-12-18
  • 修回日期:  2018-05-07
  • 網(wǎng)絡(luò)出版日期:  2018-06-12
  • 刊出日期:  2018-08-01

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