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一種AlGaN/GaN HEMT非線性器件模型參數(shù)提取的方法

常永明 毛維 杜林 郝躍

常永明, 毛維, 杜林, 郝躍. 一種AlGaN/GaN HEMT非線性器件模型參數(shù)提取的方法[J]. 電子與信息學(xué)報(bào), 2017, 39(12): 3039-3044. doi: 10.11999/JEIT170097
引用本文: 常永明, 毛維, 杜林, 郝躍. 一種AlGaN/GaN HEMT非線性器件模型參數(shù)提取的方法[J]. 電子與信息學(xué)報(bào), 2017, 39(12): 3039-3044. doi: 10.11999/JEIT170097
CHANG Yongming, MAO Wei, DU Lin, HAO Yue . A Method for AlGaN/GaN HEMT Nonlinear Device Model Parameter Extraction[J]. Journal of Electronics & Information Technology, 2017, 39(12): 3039-3044. doi: 10.11999/JEIT170097
Citation: CHANG Yongming, MAO Wei, DU Lin, HAO Yue . A Method for AlGaN/GaN HEMT Nonlinear Device Model Parameter Extraction[J]. Journal of Electronics & Information Technology, 2017, 39(12): 3039-3044. doi: 10.11999/JEIT170097

一種AlGaN/GaN HEMT非線性器件模型參數(shù)提取的方法

doi: 10.11999/JEIT170097
基金項(xiàng)目: 

國家自然科學(xué)基金(61574112 ),陜西省自然科學(xué)基礎(chǔ)研究計(jì)劃(605119425012)

A Method for AlGaN/GaN HEMT Nonlinear Device Model Parameter Extraction

Funds: 

The National Natural Science Foundation of China (61574112), The Natural Science Foundation Research Project of Shaanxi Provience (605119425012)

  • 摘要: 該文提出一種新的絕對誤差函數(shù),應(yīng)用該函數(shù)進(jìn)行非線性模型參數(shù)提取可以避免計(jì)算誤差,顯著降低參數(shù)提取的不準(zhǔn)確性。由于氮化物半導(dǎo)體器件,尤其是AlGaN/GaN HEMT器件已經(jīng)開始得到廣泛應(yīng)用,其模型和參數(shù)對射頻和電力電子器件和電路設(shè)計(jì)至關(guān)重要,分別使用3種誤差函數(shù)對 AlGaN/GaN HEMT器件模型進(jìn)行了參數(shù)提取并對比,對比結(jié)果表明該文提出的誤差函數(shù)更加精確和有效。同時(shí)為今后的電子器件的模型參數(shù)提取提供了一種有效且精確的方法。
  • ZHANG Zhili, YU Guotao, ZHANG Xiaodong, et al. 16.8 A/600 V AlGaN/GaN MIS-HEMTs employing LPCVD- Si3N4 as gate insulator[J]. Electronics Letters, 2015, 51(15): 1201-1203. doi: 10.1049/el.2015.1018.
    XU Ke, WANG Jianfeng, and REN Guoqiang. Progress in bulk GaN growth[J]. Chinese Physics B, 2015, 24(6): 1-16. doi: 10.1088/1674-1056/24/6/066105.
    DU Jiangfeng, CHEN Nanting, PAN Peilin, et al. High breakdown voltage AlGaN/GaN HEMT with high-K/low-K compoundpassiv-ation[J]. Electronics Letters, 2015, 51(1): 104-106. doi: 10.1049/el.2014.3252.
    HIROSHI O, KANEDA N, FUMIMASA H, et al. Vertical GaN p-n junction diodes with high breakdown voltages over 4 kV[J]. IEEE Electron Device Letters, 2015, 36(11): 1180-1182. doi: 10.1109/LED.2015. 2478907.
    SUN H, POMEROY J W, SIMON R B, et al. Temperature-dependent thermal resistance of GaN-on- diamond HEMT wafers[J]. IEEE Electron Device Letters, 2016, 37(5): 621-624. doi: 10.1109/LED.2016.2537835.
    TANG Y, SHINOHARA K, REGAN D, et al. Ultrahigh- speed GaN high-electron-mobility transistors with fT/fmax of 454/444 GHz[J]. IEEE Electron Device Letters, 2015, 36(6): 549-551. doi: 10.1109/LED.2015.2421311.
    GREENLEE J D, SPECHT P, ANDERSON T J, et al. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs[J]. Applied Physics Letters, 2015, 107(8): 287-290. doi: 10.1063/1.4929583.
    XI, Yuyin, HWANG Y H, HSIEH Y L, et al. Effect of proton irradiation on DC performance and reliability of circular- shaped AlGaN/GaN high electron mobility transistors[J]. ECS Transactions, 2014, 61(4): 179-185. doi: 10.1149/06104. 0179ecst.
    FITCH R C, WALKER D E, GREEN A J, et al. Implementation of high power density X-band AlGaN/GaN High Electron Mobility Transistors (HEMTs) in a millimeter- wave monolithic microwave integrated circuit (MMIC) process[J]. IEEE Electron Device Letters, 2015, 36(10): 1004-1007. doi: 10.1109/LED.2015.2474265.
    SABAT S L, COELHO L D S, and ABRAHAM A. MESFET DC model parameter extraction using quantum particle swarm optimization[J]. Microelectronics Reliability, 2009, 49(6): 660-666. doi: 10.1016/j.microrel.2009.03.005.
    HALCHIN D, MILLER M, GOLIO M, et al. HEMT models for large signal circuit simulation[C]. IEEE MTT-S International Microwave Symposium Digest, 1994, 2: 985-988. doi: 10.1109/MWSYM.1994.335191.
    WANG K and YE M. Parameter determination of Schottky- barrier diode model using differential evolution[J]. Solid- State Electronics, 2009, 53(2): 234-240. doi: 10.1016/j.sse. 2008.11.010.
    HAOUARI MERBAH M, BELHAMEL M, TOBIAS I, et al. Extraction and analysis of solar cell parameters from the illuminated currentvoltage curve[J]. Solar Energy Materials Solar Cells, 2005, 87(1-4): 225-233. doi: 10.1016/j.solmat. 2004.07.019.
    KATABOGA N, KOCKANAT S, and DOGAN H. The parameter extraction of the thermally annealed Schottky barrier diode using the modified artificial bee colony[J]. Applied Intelligence, 2013, 38(3): 279-288. doi: 10.1007/ s10489-012-0372-x.
    MEMON Q D, AHMED M M, MEMON N M, et al. An efficient mechanism to simulate DC characteristics of GaAs MESFETs using swarm optimization[C]. IEEE International Conference on Emerging Technologies, Ankara, Turkey, 2013: 1-5. doi: 10.1109/ICET. 2013.6743542.
    THAKKER R A, PATIL M B, and ANIL K G. Parameter extraction for PSP MOSFET model using hierarchical particle swarm optimization[J]. Engineering Applications of Artificial Intelligence, 2009, 22(2): 317-328. doi: 10.1016/j. engappai.2008.07.001.
    毛維, 楊翠, 郝躍, 等. 場板抑制GaN高電子遷移率晶體管電流崩塌的機(jī)理研究[J]. 物理學(xué)報(bào), 2011, 60(1): 586-591.
    MAO Wei, YANG Cui, and HAO Yue. Study on the suppression mechanism of current collapse with field-plates in GaN high-electron mobility transistors[J]. Acta Physica Sinica, 2011, 60(1): 586-591.
    YUK K S, BRANNER G R, and MCQUATE D J. A wideband multiharmonic empirical large-signal model for high-power GaN HEMTs with self-heating and charge- trapping effects[J]. IEEE Transactions on Microwave Theory Techniques, 2009, 57(12): 3322-3332. doi: 10.1109/TMTT. 2009.2033299.
    YUK K, BRANNER G R, and MCQUATE D. An improved empirical large-signal model for high-power GaN HEMTs includin g self-heating and charge-trapping effects[C]. IEEE International Microwave Symposium Digest, Boston, America, 2009: 753-756. doi: 10.1109/MWSYM.2009. 5165806.
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出版歷程
  • 收稿日期:  2017-01-24
  • 修回日期:  2017-09-18
  • 刊出日期:  2017-12-19

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