一種通用的記憶器件模擬器及在串聯(lián)諧振電路中的應(yīng)用

李志軍; 向林波; 肖文潤

doi:10.11999/JEIT161060

一種通用的記憶器件模擬器及在串聯(lián)諧振電路中的應(yīng)用

doi: 10.11999/JEIT161060

基金項目:

國家自然科學(xué)基金(61176032)，湖南省自然科學(xué)基金(2015JJ2140, 2015JJ2142)

計量
- 文章訪問數(shù): 1897
- HTML全文瀏覽量: 272
- PDF下載量: 415
- 被引次數(shù): 0
出版歷程
- 收稿日期: 2016-10-12
- 修回日期: 2017-03-20
- 刊出日期: 2017-07-19

Universal Mem-elements Emulator and Its Application in RLC Circuit

Funds:

The National Natural Science Foundation of China (61176032), The Natural Science Foundation of Hunan Province (2015JJ2140, 2015JJ2142)

摘要

摘要: 該文基于憶阻器、憶容器和憶感器的物理模型與記憶機(jī)理，提出一種統(tǒng)一形式的記憶器件模型。在此基礎(chǔ)上結(jié)合線性電壓控制浮地阻抗(VCFI)電路與電流積分器，構(gòu)建一種通用的記憶器件模擬器。該電路在拓?fù)浣Y(jié)構(gòu)保持不變的情況下，通過接入不同性質(zhì)的元件能分別模擬憶阻器、憶容器和憶感器的電學(xué)行為。最后將提出的憶阻器、憶容器和憶感器分別替換RLC串聯(lián)諧振電路中的電阻、電容和電感元件，并從時域和頻域兩方面研究了記憶器件對電路的影響。PSPICE仿真結(jié)果驗證了該模擬器的可行性和有效性。
- 憶阻器 /
- 憶容器 /
- 憶感器 /
- 串聯(lián)諧振
Abstract: Based on the physical models and memory mechanisms of memristor, memcapacitor and meminductor, this study proposes a unified form of mem-elements model. Then a universal emulator of mem-elements is implemented with linear Voltage Control Floating Impedance (VCFI) circuit and a current integrator. By the choice (resistor/capacitor/inductor) of different type components, the emulator can simulate the electrical behavior of memristor, memcapacitor, and meminductor, respectively. Finally, the proposed emulator is applied to RLC series resonant circuit, and the circuit influences of mem-elements from both the time domain and frequency domain are studied. PSPICE simulations verify that the correctness and effectiveness of the universal emulator.
- Memristor /
- Memcapacitor /
- Meminductor /
- RLC series resonant circuit

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參考文獻(xiàn)(22)

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