多比特相位量化數(shù)字射頻存貯技術(shù)及寄生電平
Multi-bit phase quantization RF memory and its spurious level
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摘要: 該文討論多比特相位量化的原理和方法,給出易于單片集成的相位量化器的拓?fù)浣Y(jié)構(gòu)形式;研究了影響寄生電平的因素,給出了寄生電平與量化比特?cái)?shù)的表示式,并著重討論了相位量化器輸入的I,Q信號幅、相不平衡對寄生電平的影響。
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關(guān)鍵詞:
- 數(shù)字射頻存貯器; 相位量化; 寄生電平
Abstract: The principle of multi-bit Phase Quantization Digital RF Memory (PQDRFM) and the implementation of Phase Quantizer (PQ) are discussed. The topology of PQ which is easy to monolithic integration is given. The factors affecting the spurious level of PQDRFM are investigated and the expression of the relationship of spurious level via the quantization bit number is given. The emphasis is put on the effect of the unbalance of PQ input amplitude and phase on the spurious level. -
W.M. Schnaitter, et al., A 0.5GHz CMOS digital RF memory chip, IEEE J. of Solid-State Circuits, 1986, SC-21(5), 720-726.[2]M. Gary.[J].H. William, H. Marty, et al., 500MHz GaAs digital RF memory modulator IC, Proc. of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium, Austin, TX, USA:Systems Processes Engineering Corp (SPEC.1996,:-[3]D.C. Schleher, Eletronic Warfare in the Information Age, Boston, London, Artech House, Inc 2000, Chapter 5, 5.2. ［4］T.T. Vu, M. Hattis, A GaAS phase digitizing and summing system for microwave signal storage,IEEE J. of Solid-State Circuits, 1989, SC-24(1), 104-117.[4]周國富,相位量化數(shù)字射頻存貯器的寄生信號性能分析,電子學(xué)報(bào),1992,20(12),26-31 -
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