在夾心結(jié)構(gòu)-Si:H膜中的反常光電導(dǎo)響應(yīng)
THE ABNORMAL PHOTOCONDUCTION RESPONSE OF -Si:H FILMS WITH SANDWICH STRUCTURE
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摘要: 在不同場強和照度下,測量了一系列夾心結(jié)構(gòu)-Si∶H膜的光電導(dǎo)響應(yīng)曲線,發(fā)現(xiàn)在較弱場強下,上升曲線和下降曲線有反?，F(xiàn)象。作者分析了光電導(dǎo)響應(yīng)曲線,指出無論是上升曲線還是下降曲線,都可以分解為由兩個變化過程組成:一個尖形和一個類指數(shù)形。通過對零場和極弱場強響應(yīng)的研究,表明上述現(xiàn)象可用光照或停止光照后空間電荷分布的變化來解釋。本文對具有低遷移率和高電阻率的光敏材料具有普遍的意義。
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關(guān)鍵詞:
Abstract: A series of curves of the photoconduction response under different field strengths and different degrees of illtimination has been measured and investigated. It is found that the rise and decay curves are abnormal under weaker fields. Analysis of these curves of photoconduction response shows that either rise curves or decay curves are composed of a spike-like and a quasi-exponential form. Considering the above fact, we suggest that these pheno-mena are due to the changes of distribution of the space charge in-Si:H films, when illumination turns on or off. It is felt that this paper is of universal significance for photosensitive materials with low mobilities and high resistivity. -
О.К.Гасанов и др.,ФТТ, 4(1970), 558.[2]海宇涵、周忠毅,電子學(xué)通訊,4(1982), 248.[3]D.E. Carlson, IEEE Trans. on ED, ED-24(:977),449.[4]D.E. Carlson et al., RCA Rev., 38(1977), 211.[6]P, Mark et al., J. Appl. Phys., 33(1962), 205.[7]A. Rose.[J]. Concepts in Photoconductivity and Allied Problems.1963,John Wiley Sons:-[8]R. Williams et al., RCA Rev., 40(1979), 371.[9]王宗畔等, ITO-a-Si異質(zhì)結(jié)太陽能電池,第二屆全國非晶態(tài)材料和物理學(xué)術(shù)討論會報告,1980. -
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