液相外延HgCdTe的研究
STUDY ON LEP OF HgCdTe AND CONTROL OF Hg PRESSURE
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摘要: 本文對液相外延生長HgCdTe及其汞壓控制進(jìn)行了研究。在理論上對開管滑動系統(tǒng)中汞損失的影響作了分析和計算,提出了準(zhǔn)平衡汞壓的方法。在實驗中設(shè)計制作了獨特的汞回流裝置,實現(xiàn)了對汞壓的控制。通過生長工藝的條件實驗,得到了各工藝參數(shù)影響外延片性能的關(guān)系,制備出表面光亮,組分為x=0.2110.002,x=0.280.001的Hg1-xCdxTe外延片。在77K下n型(未退火)和P型外延片的遷移率分別為3.36105cm2/Vs和1.81103cm2/Vs,載流子濃度分別為1.091015cm-3和1.041016cm-3。
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關(guān)鍵詞:
Abstract: The control of Hg pressure is a major problem of LEP growth of HgCdTe. In this paper the lost of Hg and its affections and control in open tube sliding LEP system are analysed theoretically. A unique method of controlling Hg pressure, called pseudo-balance Hg pressure method is proposed. In this method, a circulatory system of Hg that is efficacious for control of Hg pressure is used. By experiments of growth conditions, the better way of LEP growth of HgCdTe was found. The HgCdTe epitaxial layers have been grown with mirror-like surface morphology, x=0.2110.002 and x=0.280.001, mobility of 1.81103cm2/Vs for p-type and 3.36105cm2/Vs for n-type (not annealed), carrier concentration of 1.041016/cm-3 for p-type and 1.091015cm-3 for n-type (not annealed) at 77K. -
董培芝,激光與紅外,3(1984), 30.[2]R. K. Willardson and A. C. Beer, Semiconductor and Setnimetal, Vol. 18, Academic Press, New York, (1981).[3]A. W. Vere, D. J. Willams and J. B. Mullin, Liquid Phase Epitax Growth of HgCdTe, AD-A120027,(1982).[4]T. Tung and C. H. Su, J. Vac. Sci. Techmol, 21(1982), 117. -
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