雙柵器件的跨導(dǎo)和漏導(dǎo)
TRANSCONDUCTANCE AND DRAIN CONDUCTANCE OF DUAL-GATE FETs
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摘要: 本文將雙柵MOSFET考慮成四極器件,以電流連續(xù)、電壓守恒為基礎(chǔ),討論了其跨導(dǎo)和漏導(dǎo)特性。所提出的分析求解方法?？赏茝V到任何雙柵結(jié)構(gòu)器件。結(jié)果表明,此方法不僅簡(jiǎn)潔、適用性廣;而且物理概念清楚,將三極器件和四極器件的特性聯(lián)系了起來(lái),自然地引出了雙柵器件特有的耦合概念。對(duì)于所選取的單柵模型,跨導(dǎo)、漏導(dǎo)的計(jì)算值和實(shí)驗(yàn)值符合良好。
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關(guān)鍵詞:
- 晶體管; FET; 跨導(dǎo); 漏導(dǎo)
Abstract: The transconductances (gm1s,gm2s) and drain conductance (gds) of dual-gate FETs are evaluated by takinj; a dual-gate PET as a four-polar device based on current continuity and voltage conservation. This analytic method may be suitable for any kind of dual-gate FETs. The expressions of gm1s, gm2s, gds are quite clear in conception. The formulas set up the relations between single-gate FETs and dual-gate FETs, and lead to a special coupling idea of dual-gate devices. For the single-gate FET s model selected, there is a good agreement between calculated and experimental values of gm1s, gm2s and gds. -
R. V. Anand et al., IEEE Proc Pt. I,129(1982), 58.[2]J. R. Scott, R. A. Minasian, IEEE Trans. on MTT, MTT-32(1984), 243.[3]J. Houthoff, T. H. Uittenbogaard, Elecsronic Technology, 17(1983), 146.[4]R. M. Barsan, IEEE Trans. on ED, ED-28(1981), 523.[5]董忠,雙柵MOSFET直流特性的模擬和分析,成都電訊工程學(xué)院碩士學(xué)位論文,1986年.[6]R. M. Barsan, et al., IEEE J. of SC, SC-17(1982), 626. -
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