Si(100)和(111)面和在其上Ni分子束外延的反射高能電子衍射研究
STUDY OF Si(100) AND (111) SURFACES AND MOLECULAR BEAM EPITAXY OF Ni ON THEM BY RHEED
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摘要: 以反射高能電子衍射的方法研究了用Ar+離子轟擊和高溫處理技術(shù)獲得的潔凈的Si(100)和(111)面,以及在室溫下這些表面上分子束外延生長(zhǎng)鎳硅化物。實(shí)驗(yàn)獲得了Si(111)77以及它的負(fù)區(qū)衍射圖,Si(100)21,Si(111)1919Ni和Si(100)42Ni的表面結(jié)構(gòu)。實(shí)驗(yàn)同時(shí)表明,在低外延生長(zhǎng)速率下(0.150.5/min)生成的鎳硅化物的晶格結(jié)構(gòu)與硅基底的一樣。
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關(guān)鍵詞:
Abstract: Clean Si (100) and (111) surfaces produced by the Ar+ ion bombardment and high temperature annealing techniques, and the epitaxial growth of nickel silicides on them at room temperature using molecular beam method are studied by reflection high energy electro diffraction (RHEED). The experimental results show that Si(111)77 and its negative zone RHEED pattern, Si(100)21, Si(111)1919 Ni and Si(100)42Ni structures are obtained, and the lattice structures of nickel silicide produced during epitaxy with low growing rate (0.16--0.5 per minute) is the same as that of silicon substrate. -
Shozo Ino, Jpn. J. Applied Phys., 16(1977), 891.[2]H. Fll, Philosophical Magazine A, 45(1982), 31. -
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