短溝DMOS閾值電壓模型
A Threshold Voltage Model of the Short Channel DMOS
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摘要: 該文提出了短溝DMOS閾值電壓模型?；跍系绤^(qū)耗盡電荷的二維分布,計(jì)算溝道區(qū)中耗盡電荷總量,由此給出短溝DMOS閾值電壓模型的計(jì)算式。該模型的解析解與二維仿真器MEDICI的數(shù)值解吻合。分析表明,DMOS溝道長(zhǎng)度小于0.80m,就應(yīng)考慮短溝效應(yīng)。
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關(guān)鍵詞:
- DMOS; 閾值電壓; 短溝效應(yīng)
Abstract: A threshold voltage model of the short channel DMOS (Double-Diffusion Metal-Oxide- Semiconductor) is proposed. Based on the 2-D distribution of channel depletion charge, the channel depletion charge is calculated and the mathematical expression of the threshold voltage model of the short channel DMOS is obtained. The results of the model agree well with those of the 2-D simulator MEDICI. The analysis shows that the effect of short channel should be considered when the channel length is less than 0.80m. -
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