SOI結構M-Z型調(diào)制器的有限元法分析
FINITE ELEMENT ANALYSIS OF THE SOI STRUCTURE M-Z INTERFEROMETRIC MODULATOR
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摘要: 本文提出了采用有限元法分析SOI(Silicon on Insulator)結構M-Z(Mach-Zehnder)干涉型調(diào)制器的新方法。該方法在大截面單模SOI脊形波導理論的基礎上,根據(jù)等離子體色散效應分析了這種調(diào)制器的電光調(diào)制機理;根據(jù)有限元法分析了p+n結大注入時該調(diào)制器的電學性質,從而為實際研制成這種干涉型調(diào)制器打下了理論基礎。Abstract: A new method for analysing SOI (Silicon on Insulator) Sructure Mach-Zehnder interferometric modulator by using finite element method is put forward. On the basis of the theory of the single-mode SOI rib optical waveguides with large cross-section, the electro-optic modulating mechanism of the modulator is investigated by using the plasma dispersion effect, and the electrical characteristics of the device is analysed by using the finie element method at p+n junction large injected. So the method provides a basis of the theory for the device to be fabricated.
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