低頻低噪聲集成運(yùn)放XD1531的設(shè)計(jì)和分析
DESIGN AND ANALYSIS OF INTEGRATED OPERATIONAL AMPLIFIER WITH LOW NOISE AT LOW FREQUENCY
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摘要: 本文闡明了低頻低噪聲運(yùn)放XD1531的設(shè)計(jì)原理。從電路和版圖設(shè)計(jì)兩方面論述了該電路整個(gè)設(shè)計(jì)過(guò)程。針對(duì)電路第一級(jí)的結(jié)構(gòu),采用低頻低噪聲方法進(jìn)行設(shè)計(jì)。在版圖方面主要考慮了降低低頻噪聲,尤其是降低表面1/f噪聲的措施。通過(guò)對(duì)XD1531噪聲性能的分析以及與國(guó)內(nèi)外同類產(chǎn)品的比較,說(shuō)明了該集成電路具有低噪聲特性。同時(shí),說(shuō)明本文提出的設(shè)計(jì)方法對(duì)于降低集成電路的低頻噪聲是有效的。
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關(guān)鍵詞:
- 集成電路; 低噪聲; 運(yùn)算放大器
Abstract: The design principle is described for low frequency integrated operational amplifier XD1531 with low noise. The design procedures of both circuit and mask pattern are considered. The circuit structure of the first stage is designed with the methods for obtaining low noise at low frequency. The measures for decreasing the low frequency noise, especially the surface 1/f noise, are used for mask pattern design. By comparing its characteristics with those of other products at home and abroad, it is shown that XD1531 has lower noise in low frequency region than others and the design method is effective for bringing low noise. -
姚立真,郝躍,XD1531低頻低噪聲運(yùn)算放大器工作報(bào)告,西北電訊工程學(xué)院內(nèi)部資料,1985年11月.[2]S. T. Hsu, Solid State Electronics, 13(1970)6, 843-855.[3]M. Nishida, IEEE Trans. on ED, ED-20(1973)3, 221-226.[4]郝躍等, 幾種復(fù)化鈍化膜對(duì)集成運(yùn)算放大器的影響,第五屆全國(guó)半導(dǎo)體物理與器件會(huì)議,廈門,1985年12月.[5]郝躍等, 集成低頻低噪聲運(yùn)放XD1531實(shí)現(xiàn)過(guò)程之探討,第五屆全國(guó)半導(dǎo)體物理與器件會(huì)議,廈門,1985年12月.[6]C. D. 莫特欽巴切爾著,尤忠棋譯,低噪聲電子設(shè)計(jì),國(guó)防工業(yè)出版社,1977年.[7]R. C. Jaeger, IEEE Trans. on ED, ED-17(1970)2, 128-133.[8]莊奕琪,半導(dǎo)體器件表面1/f噪聲源及低頻低噪聲化技術(shù)的研究,西北電訊工程學(xué)院碩士研究生論文,1986年2月 -
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