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電子束光刻中的輻照損傷

孫毓平,  朱文珍, 

孫毓平, 朱文珍, . 電子束光刻中的輻照損傷[J]. 電子與信息學(xué)報, 1985, 7(4): 304-310.
引用本文: 孫毓平, 朱文珍, . 電子束光刻中的輻照損傷[J]. 電子與信息學(xué)報, 1985, 7(4): 304-310.
Zhu Wenzhen, Liang JunhouGe Huang, Liang Jiuchun. IRRADIATION DAMAGES IN ELECTRON BEAM LITHOGRAPHY[J]. Journal of Electronics & Information Technology, 1985, 7(4): 304-310.
Citation: Zhu Wenzhen, Liang JunhouGe Huang, Liang Jiuchun. IRRADIATION DAMAGES IN ELECTRON BEAM LITHOGRAPHY[J]. Journal of Electronics & Information Technology, 1985, 7(4): 304-310.

電子束光刻中的輻照損傷

IRRADIATION DAMAGES IN ELECTRON BEAM LITHOGRAPHY

  • 摘要: 本文研究了電子束光刻中電子能量(1030keV)和電荷劑量(10-610-3Ccm-2)對鋁柵MOS電容器的損傷和低溫退火(500℃)的影響。研究電子束光刻中高能量(30keV)和高劑量(10-3Ccm-2)電子束引起的損傷,對電子束汽相顯影光刻和電子束無顯影光刻是有實(shí)際意義的。實(shí)驗(yàn)表明,平帶電壓的損傷可高達(dá)十幾伏,界面態(tài)密度可高達(dá)1012cm-2eV-1以上。在一定電荷劑量下,平帶電壓的損傷對電子能量的變化(在一定范圍內(nèi))不敏感。在一定電子能量下,界面態(tài)密度的損傷對電荷劑量的變化(在一定范圍內(nèi))不敏感。低溫(500℃)退火能完全消除平帶電壓的損傷,但不能完全消除界面態(tài)密度的損傷。
      關(guān)鍵詞:
    •  
    Abstract: The irradiation damages to Al gate MOS capacitors in electron beam lithography (EBL) and the effects of annealing on damages at low temperature (500℃) are given. The degrees of damages depend on the eleetron energies (10-30keV) and the charge dosages (10-6-10-3Ccm-2). The research on the effects of high energy (30keV) and large dosage (10-3 Ccm-2) on damages is important and useful to EBL with vapor development and without devolopment. The damages of concentrations of interface states can reach one to two orders f magnitude. Under constant charge dosages, the damages of flat-band voltages are independent of the variations of the electron energies in certain energy ranges; and under constant electron energies, the damages of concentrations of interface states are independent of the variations of charge dosage in certain dosage ranges. The annealing can eliminate the damages of the flatband voltages, but can not eliminate completely the damages of the concentrations of the interface states.
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  • J. R. Szedon and J. E. Sander, Appl. Phys. Lett., 3(1965), 181.[2]K. A. Pickar and L. R. Thibault, Paper Presented at Electrochemical Society Meeting, Houston Tex., May, 1972.[3]R. F. W. Pease, et al., IEEE Trans. on ED, ED-22(1975), 393.[4]M. Peckerar, et al., J. Vac. Sci. Tech.,16(1979), 1658.[5]M. F. Millea, et al., AD-A009655, 1, Nov., 1974.[6]L. F. Thompson and M, J. Bowden, J.Electrochem. Soc., 120(1973), 1722.[7]孫毓平等,半導(dǎo)體學(xué)報,1(1980),335.[8]M. Kuhn, Solid-State Electron. 13(1970), 813.[9]M. V. Whelan, Philips Res. Rept., 20(1965), 620.
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出版歷程
  • 收稿日期:  1984-01-23
  • 修回日期:  1985-01-28
  • 刊出日期:  1985-07-19

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