內(nèi)光電導(dǎo)靶攝象管中電子束著靶時的自變尖效應(yīng)
SELF-SHARPENING EFFECT OF ELECTRON BEAM LANDING ON TARGET IN VIDICON
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摘要: 本文對Vidicon型攝象管中電子束著靶時的自變尖效應(yīng)及其對電子束分辨能力的影響進行了計算機數(shù)值分析。所采用的數(shù)學(xué)物理模型為電子束中電流密度在橫截面上的分布為Gauss分布;電子束中電子的能量分布為Maxwell分布;電子束讀出靶面信息的模型為電容放電模型。在電子束截面為一維模型時,計算了1¼、1、2/3PbO管(plumbicon)1Sb2S3管和1硒砷碲管(saticon)中電子束自變尖的情況及其對電子束幅度響應(yīng)函數(shù)(AR)的影響。分析了束電流、信號電流、束等效溫度、靶面電容、掃描速度等因素在自變尖效應(yīng)中所起的作用。本文還以1 ¼PbO靶管為例,給出了電子束截面為二維模型時,電子束有效著靶截面的自變尖情況。
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關(guān)鍵詞:
Abstract: In this paper the self-sharpening effect of electron beam landing on the target in a vidicon and its influence on resolution of electron beam have been digitally analyzed with computer. The mathematical-physical models applied are as follows: The distribution of current density in electron beam is Gaussian; the energy distribution of electrons in beam is Maxwellian; and the signal-readout model is capacitor discharge model. When the model of cross section of beam is one-dimensional, the self-sharpening effect of beam in 1¼ and 2/3plumbicon, 1 Sb2S3 vidicon and 1staticon are computed. Also their influences on AR (amplitude response) of electron beam have been computed. The influences of beam current, signal current, equivalent temperature of beam, target capacitor and velocity of scanning on the self-sharpening effect have been analyzed. when the model of cross section of beam is two-dimensional, the self-sharpening effect of beam in1¼plumbicon, as an example, is given. -
倉重光宏,テレビジョン學(xué)會全國大會講演預(yù)稿集,(1978),2-5,29.[3]倉重光宏,テレビジョン學(xué)會技術(shù)報告(1978), ED 398, TPD37-1, 1.[4]倉重光宏,テレビジョン學(xué)會全國大會講演預(yù)稿集,(1979), 3-4, 71.[5]倉重光宏,電子通信學(xué)會,(1979), ED79-38,IE79-35, 43.[7]倉重光宏,テレビジョン學(xué)會誌,32(1978), 217.[8]L. J. Van de Polder, Philips Res. Peport,22(1967), 178. -
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