Zn、Zn-Cd在In_xGa_(1-x)As中擴散的研究
STUDY OF Zn, Zn-Cd DIFFUSION IN In_xGa_1-xAs
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摘要: 本文利用ZnAs2、ZnAs2+Cd作擴散源,研究了Zn、Zn-Cd在InxGa1-xAs中的擴散。給出了擴散溫度和擴散時間,擴散源的種類和材料的組份對xj-t1/2關(guān)系的影響,Zn在InxGa1-xAs中的擴散速度(xj2/t)較Zn-Cd在InxGa1-xAs中的快。在500600℃,Zn在InxGa1-xAs的表面濃度為1101921020cm-3。Zn在InxGa1-xAs中的表面濃度較在InP中的高。利用InxGa1-xAs作1.3m發(fā)光管的接觸層可使接觸電阻降低。
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關(guān)鍵詞:
Abstract: The diffusion of Zn, Zn-Cd in InxGa1-xAs is investigated using ZnAs2 and ZnAsa+Cd as the diffusion source. The effect of the diffusion temperature, diffusion time, variety of the diffusion source and composition of the material on the relation of the xj-t1/2 is given. The diffusion velocity (xj2/t) of the Zn in InxGa1-xAs is faster than that of the Zn-Cd in InxGa1-xAs. The surface hole concentration of Zn in InxGa1-xAs is 11019-21020 cm-2 at 500-600℃. At the same diffusion condition, the surface concentration of Zn in InxGa1-xAs is higher than that of Zn in InP. Reducing of contact resistance by use of InxGa1-xAs contact layer for 1.3m LED can be expected. -
Yuichi Matsuchima, et al., Appl. Phys., 35(1979),466.[2]鄔祥生等,發(fā)光與顯示,1(1983), 1.[3]Yoshihisa, Yamamoto, et al., Jpn. J. Appl. Phys.,19(1980), 121.[4]Y-R Yuan, et al., J. Appl. Phys., 54(1983), 6044.[5]T. Kagawa, Jpn. J. Appl. Phys., 20(1981), 597.[6]Y. Horikoshi, et al., ibid., 20(1981), 437.[7]Y. Motsumoto, ibid., 22(1983), 1699.[8]張桂成等,電子科學(xué)學(xué)刊,5(1983), 221. -
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