Pt-GaAs肖特基勢壘雪崩光電探測器的研究
STUDY ON Pt-GaAs SCHOTTKY BARRIER APD
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摘要: Pt-GaAs肖特基勢壘雪崩光電探測器已研制成功。器件制作在施主濃度為0.5～31015cm-3、厚度約為20m的GaAs外延層上。為防止邊緣擊穿,用能量為500keV、劑量為11015cm-2的質(zhì)子轟擊,在直徑為150m的光敏區(qū)外形成高阻保護(hù)區(qū)。半透明的Pt肖特基勢壘膜用特殊的蒸發(fā)法形成。器件的峰值響應(yīng)波長隨偏壓的改變可以從8600()移動到8835(),截止波長可延伸到9700(),觀察到明顯的Franz-Keldysh效應(yīng)。器件倍增可達(dá)100以上;暗電流僅幾納安;過剩噪聲系數(shù)為7;上升、下降時間短于1ns。這種器件可與FET實(shí)現(xiàn)平面集成。
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關(guān)鍵詞:
- 雪崩光電探測器; GaAs; 肖特基勢壘
Abstract: Pt-GaAs Schottky barrier APDs have been investigated. The devices were fabricated on GaAs epitaxial layer with carrier concentration of 0.5-31015cm-3 and thickness of about 20 m. Guard ring along with sensitive area was formed by H+ bombardment with energy of 500 keV and dosage of 11015cm-2 to prevent edge breakdown. Semi-transparem Pt film was evaporated using a special evaporation source. The peak response wavelength of the device is 8600 -8835 at different bias voltages. Optical absopdon edge could extended to 9700 . Franz-Keldysh effect has been observed. The multiplication of above 100 could reach. Dark current is about several nA. Excess noise coefficient is 7 and both rise and fall time were less than 1 ns. The device could be integrated monolithically and planarly with GaAs FET. -
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