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利用光觸發(fā)產(chǎn)生超短電磁脈沖及其應(yīng)用前景

郭開(kāi)周

郭開(kāi)周. 利用光觸發(fā)產(chǎn)生超短電磁脈沖及其應(yīng)用前景[J]. 電子與信息學(xué)報(bào), 1993, 15(1): 60-68.
引用本文: 郭開(kāi)周. 利用光觸發(fā)產(chǎn)生超短電磁脈沖及其應(yīng)用前景[J]. 電子與信息學(xué)報(bào), 1993, 15(1): 60-68.
Guo Kaizhou. GENERATION OF ULTRASHORT ELECTROMAGNETIC PULSES AND THEIR APPLICATIONS[J]. Journal of Electronics & Information Technology, 1993, 15(1): 60-68.
Citation: Guo Kaizhou. GENERATION OF ULTRASHORT ELECTROMAGNETIC PULSES AND THEIR APPLICATIONS[J]. Journal of Electronics & Information Technology, 1993, 15(1): 60-68.

利用光觸發(fā)產(chǎn)生超短電磁脈沖及其應(yīng)用前景

GENERATION OF ULTRASHORT ELECTROMAGNETIC PULSES AND THEIR APPLICATIONS

  • 摘要: 本文對(duì)利用超短激光脈沖觸發(fā)半導(dǎo)體光導(dǎo)開(kāi)關(guān)產(chǎn)生超短電磁脈沖的裝置、器件、材料以及應(yīng)用方面的研究狀況進(jìn)行了介紹。
    Abstract: Progress in the research area of photoconductive semiconductor switches is reviewed. The recent development of photoconductive materials, the generation of high-power pulse and its application, the measurement technology using ultrashort electromagnetic pulse are presented.
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  • 參看,C. V. Shank, Generation of Ultrashort Optical Pulses, in Ultrashort Optical Pulses, 3rd ed., W Kalser, Ed. New York: Springer-Verlag, (1987), Ch. 2.[2]W. Kaiser, Ed.,Ultrashort Laser Pulses and Applications, Springer-Verlag, Berlin, Heidelberg, (1988).[3]D.H. Auston, Appl. Phys. Lett., 26(1975)3, 101-103.[4]Chi H. Lee, IEEE Trans. on MTT, MTT-38(1990)5, 596-609.[5]Chi H. Lee, IEEE Trans on ED, ED-37(1990)12, 2426-2438.[6]Hao-Ming, Shen et al., IEEE Trans. on AP, AP-3.(1990)6, 838-846.[7]Karu P. Esselle et al., IEEE Trans, on AP, AP-39(1991)11, 1587-1591.[8]R. Heidemann et al., Electron. Lett., 19(1983)9, 316-317.[9]A. P. DeFonzo et al., Appl. Phys. Lett., 50(1987),17, 1155-1157.[10]H. A. Sayadian et al., IEEE Trans. on MTT, MTT-37(1989)1, 43-50.[11]H. A. Sayadian et al., IEEE Trans. on MTT, MTT-38(1990)5, 622-628.[12]W. B. Scott, Aviation Week Space Technology, 131(1989)23, 38-41.[13]D. Krokel et al., Appl. Phys. Lett., 54(1989)11, 1046-1047.[14]Chi H. Lee, Ed., Picosecond optoelectronic Devices, New York, Academic, (1984), Ch.4 and p. 222.[15]F.W. Smith et al., Appl. Phys. Lett. 54(1989)10, 890-892.[16]M. Y. Frankel et al., IEEE Trans. on ED, ED-37(1990)12, 2449-2458.[17]M. D. Pocha et al., IEEE Trans. on ED, ED-37(1990)12, 2486-2492.[18]P.-T. Ho et al., IEEE Trans. on ED, ED-37(1990)12, 2517-2519.[19]Shangting Feng et al., IEEE Trans. on ED, ED-37(1990)12, 2511-2516.[20]M. B. Ketchen et al., Appl. Phys. Lett., 48(1986)12, 751-753.[21]M. C. Nust et al., Appl. Phys. Lett., 54(1989)1, 57-59.[22]G. M. Loubriel et al., IEEE Trans. on ED, ED-38(1991)4, 692-695.[23]W. C. Nunnally, IEEE Trans. on ED, ED-37(1990)12, 2439-2448.[24]F. J. Zutavern et al., IEEE Trans. on ED, ED-38(1991)4, 696-700.[25]D. Kuchta et al.,Appl. Phys. Lett., 57(1990)8, 1534-1536.[26][26][27]M. S. Mazzola et al., Appl Phys. Lett., 59(1991)10, 1182-1184.[28]Elichi Sano et al., IEEE J. of QE, QE-26(1990)2, 372-377.[29]L. E. Kingsley et al., IEEE Trans. on ED, ED-37(1990)12, 2449-2458.[30]G. Mouton et al., Appl. Phys. Lett., 39(1981)4, 295-296.[31]G. Arjavalingam et al., IEEE Trans. on MTT, MTT-38(1990)5, 615-621.[32]M Heimlich et al.. Electron. Lett., 28(1992)3. 249-251.[33]G. Arjavalingam et al., IEEE Trans. on AP, AP-40(1992)1, 63-66.[34]Hing-l.oi A. Hung et al., IEEE. Trans. on MTT, MTT-37(1989)8, 1223-1231.
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  • 收稿日期:  1992-03-02
  • 修回日期:  1992-09-10
  • 刊出日期:  1993-01-19

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