深能級(jí)中心的電場(chǎng)增強(qiáng)載流子產(chǎn)生效應(yīng)
THE FIELD ENHANCED CARRIER GENERATION EFFECT OF DEEP LEVEL CENTERS
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摘要: 本文研究了半導(dǎo)體表面空間電荷區(qū)中的深能級(jí)中心的電場(chǎng)增強(qiáng)載流子產(chǎn)生效應(yīng);指出應(yīng)全面考慮庫(kù)侖發(fā)射和非庫(kù)侖發(fā)射對(duì)載流于產(chǎn)生率的影響;給出了相應(yīng)的產(chǎn)生率計(jì)算公式。對(duì)計(jì)算機(jī)計(jì)算結(jié)果的分析表明,以往的只考慮庫(kù)侖發(fā)射的模型過(guò)于簡(jiǎn)單,本文理論可以較滿意地解釋有關(guān)的實(shí)驗(yàn)結(jié)果。
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關(guān)鍵詞:
- 半導(dǎo)體; 深能級(jí)中心; MOS電容
Abstract: The field-enhanced carrier generation of deep level centers in semiconductor space charge region has been studied. This paper points out that both Cou-lombic emission and non-Coulombic emission must be considered into the carrier generation rates of deep level centers. On this basis, a formula of generation rate has been given. The analysis of the computing results shows tkat previous model, in which only Coulombic emission was considered, is rather simple, and tke tkeory proposed in this paper can more satisfactorilyt explain the experimental results. -
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