NTDCZSi中輻照施主的研究
INVESTIGATION OF IRRADIATION DONOR IN NTD CZ SI
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摘要: 本文對中子嬗變摻雜直拉硅(NTDCZSi)中輻照施主(ID)的退火行為和性質(zhì)進(jìn)行了研究,并探討了不同中子輻照劑量和氧、碳含量對輻照施主形成的影響。首次報道了低于750℃熱處理所產(chǎn)生的施主平臺現(xiàn)象,并分別利用低溫Hall測量和透射電鏡對其進(jìn)行了研究。結(jié)果表明,ID在禁帶中產(chǎn)生～20meV的淺施主能級,其電活性起源于硅和二氧化硅沉淀的界面態(tài)。
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關(guān)鍵詞:
- 中子輻照直拉硅; 輻照施主; 施主平臺
Abstract: The annealing behaviour and property of irradiation donor (ID) in NTDCZSi have been studied by using the Hall effect measurements and TEM. In addidon, the effects of a variety of neutron doses and impurity (oxygen and carbon) concentrations on the formation of ID are discussed. The phenomenon of Donor plateau is discovered for the first time. The experimental results show that ID creates about a 20 meV donor level in the forbidden band, which originates from the interface states of precipitated Si/SiO2. -
徐岳生等,NTDCZSi的本征吸除效應(yīng),1988年硅材料學(xué)術(shù)會議論文集,河北 北戴河,第524頁.[2]孟祥提,電子學(xué)報,1986年,第2期,第15頁.[3]R. T. Young, et al., J. Appl. phys., 49 (1978), 4752.[4]Л.С.Смирнов著,王正元,杜光庭譯,半導(dǎo)體的反應(yīng)方法摻雜,科學(xué)出版社,1981年,第73-120頁.[5]J. Bourgoin, et al., Point Defects in Semiconductors II, Germany, Springer-Verlag, Berlin Heidelberg, (1983), P. 247.[6]曹建中等,電子技術(shù)與測試,1986年,第1期,第25頁. -
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