-Si∶H光電發(fā)射的漂移場模型
-Si:H PHOTOEMISSIVE MODEL WITH DRIFT ELECTRIC FIELD
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摘要: 本文分析了擴(kuò)散型或漂移型或具有電荷放大效應(yīng)的光陰極的量子效率。提出了具有內(nèi)場或外場的-Si∶H光電發(fā)射模型。其結(jié)構(gòu)是p-i-n -Si∶H/Bi2S3或SnO2--Si∶H-Al∶Cs∶O。估算了它們的量子效率和積分靈敏度。二者的量子效率為1-10,靈敏度為103-105A/lm。外場模型的實(shí)驗表明,結(jié)構(gòu)設(shè)計是正確的。
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關(guān)鍵詞:
- 光陰極; 非晶硅; 量子效率; 漂移場; 電荷放大效應(yīng)
Abstract: The quantum efficiency of photocathodes which are diffusion type or drift type, or which produce charge amplification effect in high field is analysed. a-Si:H photoemissive model with internal or external electric field is presented. Its structure is p-i-n -Si:H/Bi2S3 or SnO2--Si:H-Al:Cs:O. Its quantum efficiency and photosensitivity are estirnated. They are 1-102 and 103-105 A/lm respectively. The experimental results of the photoemissive model with external electric field show that the structural design is correct. -
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