大通量輻照的NTD CZ Si 高溫退火行為
HGIH-TEMPERATURE ANNEALING BEHAVIOUR OF NTD CZ Si IRRADIATED BY HIGH NEUTRON FLUENCE
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摘要: 本文研究了大通量輻照(1018n/cm2)的NTD CZ在750-1200℃范圍內(nèi)退火的行為。發(fā)現(xiàn)在該溫度區(qū)間內(nèi)會(huì)產(chǎn)生高濃度的中照施主,最高可達(dá)到1016cm-3。只有在高于1100℃退火才能獲得準(zhǔn)確的目標(biāo)電阻率.探討了大通量輻照NTD CZ Si的退火工藝,中照施主的形成及其消除條件。
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關(guān)鍵詞:
- 中子嬗變摻雜直拉硅; 中照施主; 退火; 目標(biāo)電阻率
Abstract: High temperature (750-1900℃) annealing behaviour of NTD CZ Si irradiated by high neutron fluence (1018 n/cm) is investigated. It is found that neutron irradiation induced donor (NIID) with high concentration can be produced within the temperature range, die highest concentration of the donors can arrive in value about 1016cm-3. Only if annealing temperature exceeds 1100℃, the accurate aim rwistivity can be obtained. The annealing technology for the NTD CZ Si and the condition of appearance and annihilation for NIID are studied. -
河北工學(xué)院半導(dǎo)體材料研究室,敏感器件級(jí)NTD Si的退火工藝,河北工學(xué)院材料研究中心內(nèi)部資料,1986年,第2-3頁.[2]東北工學(xué)院,熱處理對(duì)硅單晶性能影響的研究,全國(guó)硅材料經(jīng)驗(yàn)交流會(huì)資料匯編,1979年,pp. 217-227.[3]楊洪林,直拉硅單晶的熱處理,第三屆全國(guó)半導(dǎo)體集成電路及硅材料學(xué)術(shù)會(huì)議論文集(摘要),1983年,pp. 26-27.[4]J. M. Meese, et al., Neutron Transmutation Doping in Semiconductors, ed. R. D. Larrabee, Plenum Press, New York, London, 1980, pp. 101-103.[5]B. J. Baliga, Neutron Transmutation Doping in Semiconductors, ed. R. D. Larrabee, Plenum Press, New York, London, 1984, pp. 167-186.[6]J. W. Cleland, N. Fukuoka, Neutron Transmutation Doping in Semiconductors, ed R. D. Larrabee, Plenum Press, New York, London, 1980, pp. 55-58.[7]Wang Zhengyuan, Lin Langying, Neutron Transmutation Doping in Semiconductors, ed. R. D. Larrabee, Plenum Press, New York, London, 1984, pp. 311-326.[8]Л.C.斯米爾諾夫著,王正元,林光庭譯,半導(dǎo)體的核反應(yīng)方法滲雜,科學(xué)出版社,1986年,pp. 78-118. -
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