砷化鎵雙異質(zhì)結(jié)高輻射度發(fā)光管的研制
THE STUDY OF GaAs DOUBLE HETEROJUNCTION HIGH-RADIANCE LIGHT-EMITTING DIODES
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摘要: 用液相外延技術(shù)生長GaAs-Ga1-XAlXAs雙異質(zhì)結(jié)材料,并制成小面積高輻射度發(fā)光二極管。輻射度高達100w/srcm2以上,尾纖(芯徑60m,N.A.=0.17)輸出功率最高達200W,外推工作壽命105小時。已用于1.8公里,8.448Mb/S,PCM-120路光纖電話通信系統(tǒng)。對器件的工作特性進行了分析,討論了影響因素及改進途徑。
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Abstract: GaAs-Ga1-x Alx As double heterojunction material was grown by liquid phase epitaxial technique, and small area high radiance light emitting diodes are made. The radiation power is above 100W/sr.cm2, output power of the tail fibre (inner diameter 60m N.A.=0.17) is 200W, and extrapolated life reaches 105 hours. It is already being used in the 1.8km 8.448 Mb/s PCM-120 route optic fibre telephone communication system. Analysis is made on the operational characteristics of the diodes. Factors affecting its proper use and approaches for improvement are discussed. -
C. A. Burrus, Optic. Comm.,4(1971), 307.[2]泮慧珍、鄔祥生,黃磊,科技通訊,1978,第3期,第7頁.[4]H. F. Lockwood and M. Ettenberg, J. Crystal growth, 15(1972),81.[5]]張桂成等,科技通訊,1978,第3期,第51頁.[6]Shigonebu Yamakoshi, et al., Appl. Phys. Lett., 31(1977), 627.[7]J. I. Pankove, IEEE J. Quantum Electron QE-4(1968), 119. -
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