GaAs中的低溫Zn擴散
THE DIFFUSION OF Zn IN GaAs AT LOW TEMPERATURE
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摘要: 本文研究了低溫條件下Zn向GaAs中的擴散。實驗是用ZnAs2源在抽真空的石英管中進行的。研究了結深Xj,擴散溫度T和擴散時間t的關系。結果表明,表面層電阻Rs隨Xj,的增加而降低;表面濃度Cs隨1/T的增加而降低;遷移率隨Cs的增加而降低。將Cs對1/(RsXj)作圖表明,Cs隨1/(RsXj)的增加而增加。這一關系可作為判斷多層GaAlAs/GaAs外延層擴Zn后表面濃度的簡便方法。文中討論了Zn在GaAs和InP中的擴散機理,比較了Zn在InP和GaAs擴散層中的參數(shù)。 該擴散工藝可獲得表面光亮、無損傷的高濃度表面層,并已在GaAs/Ga1-xAlxAs雙異質(zhì)結發(fā)光管的制備工藝中應用。制得了光輸出功率為24mW、串聯(lián)電阻為35、壓降為2.4V的GaAs/Ga1-xAlxAs雙異質(zhì)結發(fā)光管。
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關鍵詞:
Abstract: In this report the diffusion of Zn into GaAs at low temperature has been investigated. The experiments are accomplished in an evacuated and sealed quartz ampoule using ZnAs2 as the source of Zn.The relation among the junction depth (Xj), the time (t) and the temperature (T) of diffusion has been investigated. It is found that the sheet resistance (Rs) of diffu-sion layer increases as the junetion depth (Xj) decreases, the surface concentration (C2) decreases as 1/T increases and the carrier mobility () decreases as Cs increases. The Cs vs. 1/XjRs is plotted, it indicates that the Cs increases as 1/(XjRs) inereases. This is a simple method for determining the Cs of the multiple Ga1-xAlxAs/GaAs epitaxial layer. The mechanism of Zn diffusion in GaAs and InP is discussed. This process has been applied to fabricate GaAlAs/GaAs double heterojunction light emitting idodes and an output power of 2-4 mW and a series resistance of 3-5 are obtained. -
H. C. Casey,Trans.AIME, 242(1968), 406.[5]上海無線電十九廠,復旦大學,半導體集成電路工藝(上冊),1971年,第145頁.[6]L. Kenneth, J. Electrochem. Sec., 116(1969), 507.[8]張桂成等,半導體光電,1981年,第2期,第189頁.[9]P. K. Tien, et al., Appl. Phys. Lett., 34(1979), 701.[11]潘慧珍等,電子學通訊,3(1981), 22. -
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