硅低溫本征載流子濃度的計算
CALCULATION OF THE INTRINSIC CARRIER CONCENTRA TION IN SILICON AT LOW TEMPERATURE
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摘要: 本文提出了低溫區(qū)高精度的禁帶寬度的表達式,獲得了低溫區(qū)本征載流子濃度的簡明公式?？紤]到禁帶變窄效應的作用,本文導出了重摻雜硅中本征載流子濃度與溫度和雜質濃度的關系式。與常溫情況相比,低溫下本征載流子濃度將隨雜質濃度的上升更為劇烈地上升。Abstract: A accurate expression for the bandgap and a simple formula for the intrinsic carrier concentration at low temperature are presented. The relation between the intrinsic carrier concentration and the temperature and doping concentration in the heavily doped silicon is obtained, under the consideration of the narrowing effect of the bandgap at the heavy doping level. It is indicated that the intrinsic carrier concentration increases more rapidly with increasing the doping concentration at low temperature than at room temperature.
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