非晶硅光電導(dǎo)響應(yīng)的動力學(xué)研究(Ⅰ)強電場下的光電導(dǎo)響應(yīng)
THE DYNAMICS IN PHOTOCONDUCTION RESPONSE OF AMORPHOUS SILICON (Ⅰ) The Photoconduction Response under Strong Electric Field
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摘要: 本文從動力學(xué)的觀點出發(fā),研究了各種條件下的光電導(dǎo)響應(yīng),以及有關(guān)的效應(yīng)。本篇只討論強電場下的光電導(dǎo)響應(yīng)。 我們測量了不同照度和電場下的瞬態(tài)響應(yīng),發(fā)現(xiàn)強光區(qū),在一定強電場下,時間常數(shù)0隨照度F的-0.5次方變化(0=F-0.5)。弱光區(qū)時間常數(shù)不變,在一定照度下,上升時間隨電場指數(shù)變化;下降時間不變。由于晶體中的一些概念已不適用于非晶硅的情況,我們從Mott-CFO模型出發(fā),用速率方程推導(dǎo)出弱光和強光照射下的光電導(dǎo)響應(yīng)公式,較好地解釋了實驗結(jié)果。
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關(guān)鍵詞:
Abstract: In this paper, the photoconduction response and related effects under different conditions are investigated from the view point of dynamics. The photoconduction response under strong electric field is discussed.The photoconduction response under different illumination and different field intensity have been measured. In strong light region with certain strong field, the time constant 0 versus illumination F is given by the relation 0=aF-0.5; however, 0 is a constant in weak light region. The rise time varies exponentially with the field intensity, but the decay time is a constant. Because normal ideas about crystals could not fir the condition of a-Si, we derived an equation of photoconduction response with illumination in both weak and strong light regions, according to the Mott-CFO model and by the rate equations. It can explain the expermental results well. -
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