1.3m InGaAsP/InP雙異質(zhì)結發(fā)光二極管的研究
STUDY OF 1.3m InGaAsP/InP DOUBLE HETEROJUNCTION LIGHT EMITTING DIODES
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摘要: 正 隨著光纖通信系統(tǒng)的發(fā)展,長波(1.11.7m)光源的研究巳廣泛引起重視。因為在這一波長范圍內(nèi),石英光纖具有低的傳輸損耗和材料色散。文獻[1]指出,用InGaAsP/InP發(fā)光二極管(=1.3m)作光源的系統(tǒng)的傳輸容量比目前常見的用GaAlAs/GaAs發(fā)光
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關鍵詞:
Abstract: InGaAsP/InP double heterostructure material was grown by liquid phase epitaxial technique and Burrus type light emitting diodes were made from it. The output power is 1 m W at 100mA driving current. The emission wavelength is 1.3 m and the operating time has reached 3 103 hours.The I-V, I-P charaeteristics and the emission spectrum of the light emitting diodes are discussed. And it is pointed out that the structure of the device and the fabrieation technique do have influence upon the characteristics of the light emitting diodes,and the emission spectra of certain light emitting diodes have two peaks, it is due to the p-n junction displacement. -
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