硅中鈦的若干物理性質(zhì)
SEVERAL PROPERTIES OF Ti IN SILICON
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摘要: 本文報道研究擴(kuò)散摻鈦的硅中深能級的結(jié)果。用DLTS法觀測到三個與鈦有關(guān)的深能級,即在n-Si(Ti)中有二個電子陷阱,能級位置分別為Ec0.23eV和Ec0.53eV,在p-Si(Ti)中有一個空穴陷阱,能級位置為Ev+0.32eV。詳細(xì)的電容瞬態(tài)研究得到了這些能級在一定測試溫度范圍內(nèi)的熱激活能和俘獲截面以及其它有關(guān)參量。本文還就測量結(jié)果對能級的鍵合性質(zhì)和釘扎于那一能帶做了討論。
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關(guān)鍵詞:
Abstract: Some results in investigating deep levels in Ti-doped silicon are given. Three Ti associated deep levels are found by DLTS. They are two electron trap levels located at Ec- 0.23 eV and Ec - 0.53eV respectively in Ti-doped n-silicon and a hole trap level located at Ev +0.32eVin Ti-doped p-silicon. In order to study these levels further, the method of transient capacitance at constant temperature is used, and the thermal activation energy and capture cross-section in the range of experimental temperature and other related parameters are obtained. According to our experimental results, a brief discussion on the bonding feature of these levels and on their pinning to which band is given. -
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