同型外延材料表面光伏法測試的分析
ANALYSIS OF THE SURFACE PHOTO-VOLTAGE METHOD MEASUREMENTS
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摘要: 本文應(yīng)用數(shù)值計算方法研究了表面光電壓是表面非平衡少子濃度的單調(diào)函數(shù)這一假設(shè)對于同型外延材料的可應(yīng)用性。我們發(fā)現(xiàn)這一假設(shè)對該材料一般地說并不成立。因此在使用等光伏表面光伏法測試同型外延材料少子擴散長度時一般不應(yīng)把表面非平衡少子濃度視為常數(shù)。在文中,我們也分析了可以把表面非平衡少子濃度作常數(shù)處理的條件。
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關(guān)鍵詞:
- 外延材料; 擴散長度; 表面光伏法
Abstract: The applicability of the assumption, the surface photo-voltage is a monotonic function of the surface excess minority carrier density, to epitaxial material is studied by numerical analysis method. It is found that this assumption is unreasonable for epitaxial material in general. Therefore when the minority carrier diffusion length in epitaxial material is measured by the equal-surface-photo-voltage method, the surface excess minority carrier density should not be considered as a constant. In this paper,the condition under which the surface excess minority carrier density may be treated as a constant is also analysed. -
A. M. Goodman, J. Appl. Phys., 32(1961)12, 2550-2552.[2]S. C. Choo, A. C. Sanderson, Solid-St. Electron., 13(1970)5, 609-617.[3]S. S. Li, Appl. Phys. Lett, 29(1976)7, 126-127.[4]M. K. Alam, Y. T. Yeow, Solid-St. Electron., 24(1981)12, 1117-1119.[5]W. E. Phillips, Solid-St. Electron., 15(1972)10, 1.097-1102.[6]Annuai Book of ASTM Standards on Electronics, Part 43, F391, pp. 770-775, M. D. Easton (1978).[7]E. O. Johnson, Phys. Rev., 111(1958), 153-166.[8]T. S. Moss, J. Electron. Cons, 1(1955), 126-133.[9]M. K. Alam, Y. T. Yeow, Appl. Phys. Lett., 37(1980)5, 469-470.[10]T. I. Seidman, S. C. Choo, Solid-St. Electron., 15(1972)11, 1229-1235. -
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