大電流時(shí)晶體管電流增益下降的物理原因
VERIFICATION OF THE PHYSICAL REASON FOR THE CURRENT GAIN FALL-OFF AT HIGH CURRENTS
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摘要: 正 1.引言 眾所周知,晶體管的電流增益與收集極電流有關(guān),開(kāi)始它隨收集極電流增大而增大,達(dá)到一最大值后,它又隨收集極電流的進(jìn)一步增大而逐漸減小。所謂大電流時(shí)電流增益下降,就是指收集極電流大于電流增益達(dá)最大值所對(duì)應(yīng)的收集極電流后電流增益下降的現(xiàn)象。 關(guān)于大電流時(shí)電流增益下降的物理原因,過(guò)去有兩種解釋:一是由Webster提出的基區(qū)電導(dǎo)調(diào)制效應(yīng);另一是由Kirk提出的有效基區(qū)展寬效應(yīng)
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關(guān)鍵詞:
Abstract: Starting from the temperature characteritics of the transistor current gain, the temperature-dependent law of the collector current just as the current gain begins to fall-off is studied theoretically and experimentally. It is verified that the physical reason is the base widening effect. -
W. M. Webster, Proc. IRE, 42(1954), 914.[2]C. T. Kirk, IEEE Trans. on ED, ED-9(1962), 164.[3]R. J. Whitter and D. A. Tremere, ibid., ED16 (1969), 39.[4]D. L. Bowler and F. A. Lindholm, ibid, ED-20(1973), 257.[5]P. L. Hower, ibid, ED-20 (1973), 426.[6]R. Kumar and L. P. Hunter, ibid., ED-22(1975), 1031.[7]G. Rey, F. Dupuy and J. P. Bailbe, Solid-State Electron. 18(1975), 863.[8]C. B. Norris and J. F. Gibbons, IEEE Trans. on ED, ED-14(1967), 38.[9]F. J. Morin, Phys. Rev., 93(1954), 62.[10]E. I. Ruder, ibid, 90(1951), 766.[11]C, Kittel, Introduction to Solid State Physics, p. 94, New York, John Wiley and Sons., Inc.,1956.[12]H. F. Wolf, Silicon Semiconductor Data, Signetics Corporation, 1969, p. 32. -
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