砷化鎵表面自旋極化光電子發(fā)射
THE SPIN POLARIZED EFFECT OF PHOTOELECTRONS EMITTED FROM GaAs SURFACE
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摘要: 本文詳細(xì)地介紹了在圓偏振光作用下,NEA GaAs表面發(fā)射目旋極化光電子的原理,及NEA GaAs表面的制備和裝置。介紹了表面Cs-O激活的方法。在用此法激活的NEA GaAs(100)表面上可得到靈敏度為8A/mW,極化度約用35%以上的光電子束。發(fā)現(xiàn)清潔的GaAs表面覆蓋以50%60%Cs單原子層時(shí),光電子的發(fā)射出現(xiàn)第一個(gè)極大值,同時(shí)發(fā)現(xiàn)穩(wěn)定的發(fā)射取決于銫吸附量。
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關(guān)鍵詞:
- NEA光電發(fā)射; 自旋極化電子源; 圓偏振光
Abstract: The principle of the spin polarized effect of photoelectrons emitted from NEA GaAs surface which is irradiated by circularly polarized light is described in detail. The preparation of NEA GaAs surface and apparatus used also are mentioned. A photoelectron beam with sensitivity of 8 A/mW and polarization of above 35% is obtained on the NEA GaAs (100) surface in the activation with caesium and oxygen. It is found that the first maximum emission occurs as the GaAs surface is caesiated in a monolayer of 50% to 60% and unstable emission is caused by desorption of caesium. -
E. Garwin, D. T. Pierce et al., Phys. Acta, 47(1974), 343.[2]D. T. Pierce,Felix Meier, Phys. Rev., B13(1976) 12, 5484-5500.[3]D. T. Pierce et al., Rev. Sct. Instrum., 51(1980) 4, 478-499.[4]J. Kessier, Polarized Electrons, Berlin, springer,1976.[5]周清等,真空科學(xué)與技術(shù),7(1987),404-406.[6]周清等,真空科學(xué)與技術(shù),8(1988),59-62.[7]B. Reihl et al., Phys. Rev., B19(1979), 6358-6366. -
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