InP/InGaAs(P)材料中的低溫開(kāi)管Zn擴(kuò)散
LOW TEMPERATURE OPEN TUBE Zn DIFFUSION IN InP/lnGaAs(P)
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摘要: 為了在InP/InGaAs(P)材料中進(jìn)行精確的選擇擴(kuò)散,同時(shí)又要保證外延生長(zhǎng)的多層異質(zhì)結(jié)構(gòu)不被破壞,提出了一種新的低溫開(kāi)管Zn擴(kuò)散方法。該法直至在T=500℃,t=5min的條件下,重復(fù)性仍很好。應(yīng)用該法研究了低溫條件下Zn在InP,InGaAs(P)材料中的擴(kuò)散行為。實(shí)驗(yàn)首次發(fā)現(xiàn),Zn在InGaAsP材料中的擴(kuò)散速率與材料中P含量的平方成正比。
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關(guān)鍵詞:
Abstract: A new method for accurate Zn diffusion in InP/InGaAs(P) at low temperature is put forward in order to keep the carrier profile in multilayers from redistribution. Several kinds of diffusion sources with different Zn contents are used in the experiment that shows good reprodu-cibility of the method. Using this method, the characteristics of low temperature Zn diffusion in InP, InGaAs and InGaAsP are studied, and it is found for the first time that the Zn diffusion, rate is proportional to the square of the phosphorus content in the materials. -
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