BF2+注入多晶硅柵的SIMS分析
SIMS ANALYSIS OF BF2+ IMPLANTED Si-GATE
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摘要: 文本采用SIMS技術(shù),分析了BF2+注入多晶硅柵退火前后F原子在多晶硅和SiO2中的遷移特性。結(jié)果表明,80keV,21015和51015cm-2 BF2+注入多晶硅柵經(jīng)過900℃,30min退火后,部分F原子已擴(kuò)散到SiO2中。F在多晶硅和SiO2中的遷移行為呈現(xiàn)不規(guī)則的特性,這歸因于損傷缺陷和鍵缺陷對F原子的富集作用。
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關(guān)鍵詞:
- 二氟化硼; 硅柵; 離子注入; 二次離子質(zhì)譜儀
Abstract: The migration of fluorine atoms in poly-silicon and SiO2 of BF+2 implanted Si-gate before and after annealing has been analyzed using SIMS. The results show that a part of fluorine atoms of BF+2 implanted Si-gate with an energy of 80keV and doses of 21015 and 51015cm-2 after annealing diffiuse into SiO2 region of this gate. Anomalous migration of fluorine atoms is observed in both poly-silicon and SiO2. This is due to the collection of fluorine atoms in the regions of residual damage and bond defects. -
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