p-InP與Au-Zn、Ti/Au、Pd/Au和Ti/Pd/Au接觸時(shí)的界面性質(zhì)和電學(xué)特性
INTERACTIONS OF THE p-InP WITH Au-Zn, Ti/Au, Pd/Au Ti/Pd/Au AT INTERFACE AND THEIR ELECTRICAL PROPERTIES
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摘要: 本文用俄歇電子能譜和掃描電子顯微鏡等方法研究了p-InP與Au-Zn,Ti/Au,Pd/Au和Ti/Pd/Au接觸在熱處理過程中的互擴(kuò)散現(xiàn)象.結(jié)果表明:Au較Ti、Pd易向p-InP內(nèi)擴(kuò)散。研究了 p-InP/Au-Zn體系的合金化條件對(duì)比接觸電阻(c)的影響。在 450℃熱處理12 min或在 350℃熱處理30 min,均可得到較低的比接觸電阻,這表明界面處的互擴(kuò)散程度是決定比接觸電阻的重要因素。Au-Zn合金在蒸發(fā)和熱處理的過程中,Zn趨向于凝集在最表面層,而不能充分發(fā)揮它在InP中的受主作用,這是該體系的c值偏高的原因之一。
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關(guān)鍵詞:
Abstract: In this report, interdiffusion of the p-IuP with Au-Zn Ti/Au, Pd/Au, and Ti/Pd/ Au at interface has been investigated by Auger electron spectroscopy and electron spectroscopy for chemical analysis. The surfaco morphology for the heat treatment are observed with scanning electron microscopy.It is found that the in-diffusion of Au is easier than that of Pd and Ti, and the out-diffusion of In is easier than that of P. The effects of the alloying temperature and time on the specific contact resistance of the p-InP/Zu-Zn system are studied. The lower specific contact resistance, c=2.4--2.710-4 cm2, is obtained when alloying at 450℃ for 2 min or at 350℃ for 30 min. these results indicate that the specific contact resistance strongly depends on the interface interdiffusion degree. The Zn in Au-Zn alloy distributes onto the most surface layer of the p-InP/Au-Zn system during evaporation process and heat treatment. It may be one of the reasons for the higher specific contact resistance. -
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