高溫CMOS數(shù)字集成電路的瞬態(tài)特性分析
TRANSIENT CHARACTERISTIC ANALYSIS OF HIGH TEMPERATURE CMOS DIGITAL INTEGRATED CIRCUITS
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摘要: 本文分析了高溫CMOS倒相器和門電路的瞬態(tài)特性,建立了它們的上升時(shí)間,下降時(shí)間和延遲時(shí)間的計(jì)算公式。根據(jù)本文分析的結(jié)果,高溫CMOS倒相器和門電路瞬態(tài)特性變差的原因是由于MOST閾值電壓和載流子遷移率降低,以及MOST漏端pn結(jié)反向泄漏電流增大的緣故。本文給出的計(jì)算結(jié)果能較好地解釋實(shí)驗(yàn)現(xiàn)象。
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關(guān)鍵詞:
- CMOS數(shù)字集成電路; 瞬態(tài)特性; 高溫CMOS
Abstract: This paper analyzes transient characteristics of high temperature CMOS inverter and gate circuits, and gives computational formulas of their rise time, fall time and delay time. It may be concluded that the transient characteristics of high temperature CMOS inverter and gate circuits deteriorate due to reduction of carrier mobility and threshold voltages of MOST's and increase of leakage currents of MOST's orain terminal pn junction. The calculation results can explain experimental phenomena. -
Shoucair F S, et al. IEEE Trans. on CHMT, 1984, CHMT-7(1): 146-153.[2]張廷慶,等.半導(dǎo)體集成電路.上海:上?？萍汲霭嫔?1986,第165,166,168頁(yè).[3]Shoucair F S, et al.[J]. Microelectronics Reliability.1984,24(3):465-[4]Shoucair F S, et al. IEEE Trans. on ED, 1988, ED-35(11): 2424-2426.[5]施敏.半導(dǎo)體器件物理.北京:電子工業(yè)出版社,1987,第60頁(yè).[6]童勤義.超大規(guī)模集成物理學(xué)導(dǎo)論.北京:電子工業(yè)出版社,1988,第260頁(yè). -
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