摘要:
VVMOS晶體管是一種開有V形槽的垂直溝道高頻功率MOS場(chǎng)效應(yīng)器件,它的一個(gè)主要優(yōu)點(diǎn)是與其它MOS器件一樣不會(huì)發(fā)生二次擊穿,然而近來一些作者報(bào)道MOS器件有負(fù)阻擊穿效應(yīng),而這種負(fù)阻擊穿效應(yīng)也會(huì)引起二次擊穿,導(dǎo)致器件燒毀。我們?cè)跍y(cè)量自制的VVMOS晶體管時(shí),也觀察到了負(fù)阻擊穿,經(jīng)過研究,提出了縱向寄生npn雙極晶體管的VVMOS晶體管負(fù)阻擊穿模型,在此基礎(chǔ)上還提出了幾種抑制負(fù)阻擊穿效應(yīng)的方法,在采用了這些方法后,負(fù)阻擊穿效應(yīng)被減弱,甚至被消除,從而證實(shí)了所提出的VVMOS晶體管負(fù)阻擊穿模型。
Abstract:
VVMOS transistor is a new type of high frequency power MOS transistor with vertical channels at the surface of the V-groove. Like other MOSFET s, one of the important features is no secondary breakdown, However, these is negative resistance breakdown, effect in MOSFET's is reported recently by some authors. The reported effects may eause secondary breakdown, and result in destructive damage to the de-vices.While measuring the VVMOSFET s made in our laboratory, we have also observed the destructive negative resistance breakdown effect. And model based on the effect of parasitic vertical bipolar npn transistor is proposed to explain this effect. Some using these method, the negative resistance breakdown effect has been lowered of even eliminated, and thus the proposed negative resistance breakdown model for VVMOSFET's is verified.
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