硅直接鍵合工藝對晶片平整度的要求
REQUIREMENT OF SILICON FLATNESS FOR SILICON DIRECT BONDING TECHNOLOGY
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摘要: 本文用彈性力學(xué)近似,給出了鍵合工藝對硅片表面平整度的定量要求以及沾污粒子與孔洞大小之間的關(guān)系,并用X射線雙晶衍射技術(shù)和紅外透射圖象對鍵合硅片進行了實驗研究。
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關(guān)鍵詞:
- 鍵合工藝; 硅材料; 平整度; 雙晶衍射技術(shù)
Abstract: The influence of silicon slice flatness on bonding technology and the relation between foreign particle and resulting bubble are quantitatively presented by the elastic theory. It is demonstrated experimentally by X ray double crystal dif-fractometry and infrared transmission imager. -
Lasky J B. Appl. Phys. Lett., 1986, 48(1): 78-80.[2]Nakagawa N, et al. 1800V bipolar-mode MOSFETs: a first application of SDB technique to a[3]power device. Proc. IEDM. CA, USA: 1986, 122-125.[4]Barth P W.Sensors and Actuators, 1990, A23(1): 919-926.[5]Lu S J. Sensors and Actuators, 1990, A23(1): 916-963.[6]Maszara W P. J. Electrochem. Soc., 1991, 138(1): 341-347.[7]Tong Q Y, et al. IEEE Electron Device Lett., 1991, 12(3): 101-103.[8]Maszara W P, et al. J. Appl. Phys., 1988, 64(10): 4943-4950.[9]Tong Q Y, et al. Electron Lett., 1991, 27(3): 288-289.[10]吳家龍.彈性力學(xué).上海:同濟大學(xué)出版社,1987,317-325.[11]徐芝倫.彈性力學(xué)教程.北京:高等教育出版社,1980,288-294.[12]黃慶安,等.電子科學(xué)學(xué)刊,1992,14(6): 574-578. -
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