鎳硅化物生成的TEM原位研究
STUDY OF THE FORMATION OF NICKEL SILICIDES IN SITU BY TEM
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摘要: 蒸涂法獲得的Si-Ni界面在室溫到800℃下熱處理,并用透射式電子顯微鏡對它進(jìn)行原位研究。在化學(xué)清洗的潔凈的Si(100)及(111)面上生成了Ni2Si,NiSi和NiSi2系列。實驗表明,在真空度為110-6mmHg,溫度為650℃時,化學(xué)清洗的Si表面上生成了SiC;各種鎳硅化物的出現(xiàn)不是在某一確定溫度;在Si(111)面上外延生長鎳硅化物比在(100)面上容易。
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關(guān)鍵詞:
- 半導(dǎo)體材料; 鎳硅化物; TEM; 原位研究
Abstract: The interface of Si-Ni produced by evaporation was annealed from room temperature to 800℃ and in situ studied by transmission electron microscopy (TEM). The formation of Ni2Si, NiSi and NiSi2 on chemically cleaned Si (100) and (111) surfaces has been investigated. On the basis of experimental results, SiC had been formed at 650℃ on such cleaned Si surface at 1x10-6 mmHg vaccum; the appearance of that series of nickel silicide were not at an exact temperature; and it would be easier to epitaxy silicides on Si (111) than (100) surface. -
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