正向小注入脈沖下多子陷阱響應(yīng)和兩種載流子俘獲率之比
THE RESPONSE OF MAJORITY CARRIER TRAP UNDER THE FORWARD BIAS LOW-INJECTION PULSE AND THE RATIO OF THE CAPTURE CONSTANTS OF THE TWO KINDS OF CARRIERS
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摘要: 正向小注入下分析了p+-n結(jié)的多子陷阱響應(yīng)。指出了其中的少子注入俘獲效應(yīng)。當p-n結(jié)反向偏壓足夠小,以致其響虛區(qū)中尾區(qū)的作用不容忽視時,多子陷阱的少子注入俘獲效應(yīng)就在其DLTS中明顯地表現(xiàn)出來。這種效應(yīng)可用于在小注入條件下,測量多子陷阱兩種載流子俘獲率之比Cp/Cn。
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關(guān)鍵詞:
- 半導體物理; p-n結(jié); DLTS
Abstract: The response of the majority carrier traps in the semiconductors p+-n junction is analysed in detail under the low-injecting conditions. It points out that the effects of the majority carrier injecting and captured by the traps may happen if the forward bias voltage is larger enough but limited within the low-injection range. Yhen the reverse bias voltage is smaller so that the response of the tail region is not neglected than of the whole response region, then the effect of the minority carriers injecting and captured will be observable in the DLTS. It can be used to measure the Cp/Cn. -
D. V. Lang, J.Appl. Phys., 45(1974), 3023.[2]A. C. Wang, C. T. Sah, J.Appl. Phys., 57 (1985), 4645.[3]傅春寅,魯永令,曾樹榮,物理學報,34(1985), 1559.[4]傅春寅,魯永令,曾樹榮,吳恩,半導體學報,8(1987), 130.[5]C. T. Sah, Solid-State Electron, 13 (1970), 759. -
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