p型硅片表面氧化霧缺陷的吸除
GETTING OF THE HAZE DEFECTS ON p-Si WAFER
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摘要: 利用快中子輻照在p型硅片中產(chǎn)生輻照缺陷,利用其作為熱處理時(shí)硅中氧沉淀的成核中心,在硅片表面層形成潔凈區(qū)和在體內(nèi)形成吸雜區(qū),能有效地抑制硅片表面氧化霧缺陷的形成.提出了較為實(shí)用的退火工藝和簡單的解釋.
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關(guān)鍵詞:
- 硅片; 霧缺陷; 快中子輻照
Abstract: The irradiation defects in Si wafer introduced by fast neutron can be used to act as nuclei of oxygen precipitation. These defeccts accelerate the formarion of oxygen precipitation in denuded region as well as getting irapurity region, thus haze dtfects on Si wafer can be restraint effectively. In this paper, a more practicable annealing technology and a brief interpretation are given. -
D. Pamerantz, J. Appl. Phys., 10(1976)38, 5020-5023.[2]W. Wijaranakula et al., J. Electrochem. Soc., 137(1990)4, 1262-1265.[3]L. Katz et al., Neutron Transmutation Doping in Semiconductor, Ed. by T. M. Meese, New York,[4](1979), p. 229-230.[5]Y. H. Lee et al., Phys. Rev., 2A(1965)138, 543 -545.[6]唐建,p型111硅片氧化霧缺陷形成機(jī)理,河北工學(xué)院碩士研究生畢業(yè)論文,天津,1992年,第49頁. -
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