熱解乙氧基鋁制備次級(jí)電子發(fā)射膜
FABRICATION OF SECONDARY EMISSION FILM BY PYROLYZATION OF ALUMINIUM ETHOXIDE
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摘要: 利用某些有機(jī)烷氧基金屬化合物的熱分解,可在玻璃、金屬、陶瓷或半導(dǎo)體基片上沉積相應(yīng)的金屬氧化物次級(jí)發(fā)射膜。例如:由乙氧基鎂(或鋁)的熱解制得MgO(或Al2O3)膜。本工作由自制乙氧基鋁和五氯化鉬,在玻璃基底上熱解沉積制得合適電阻率的次級(jí)發(fā)射膜Al2O3∶Mo.膜厚1000,電阻率107-108cm,最大次級(jí)電子發(fā)射系數(shù) max=3.1,熱解條件為450℃,12min。
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關(guān)鍵詞:
- 次級(jí)電子發(fā)射膜; 熱解沉積; 乙氧基鋁
Abstract: A metal-oxide secondary emission film can be deposited on glass, ceramic or semiconductor substrates by thermal decomposition of an organo-metal alkoxide. For instance, MgO (or Al2O3) secondary emission film can be obtained from magnesium (or Aluminium) ethoxide thermal decomposition. In the present method, Al2O3: Mo secondary emission film has been made from thermal decomposition of home-made Aluminium ethoxide and Molybdenum pentachloride. The depositing conditions are T = 450℃ and t=12min for the about 1000 thickness of film to get. The maximum secondary emission coefficient and resistivity of the film are max=3.1, =107-109, cm respectively. -
C.A. Spindt, et al., Rev. Sci. Instrum., 36(1965), 775-779.[2]石川和雄,応用物理,38(1969),546-554.[3]Б.А.Вишняков,и др., Неорга Матер., 8(1972), 185-186.[4]И.М.Бронштейн, и др., Радиотехника и элетр., 14(1969), 2077-2079. -
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