長(zhǎng)產(chǎn)生壽命的快速測(cè)量方法
RAPID DETERMINATION OF LONG GENERATION LIFETIME
-
摘要: 本文提出了線性電壓掃描下長(zhǎng)產(chǎn)生壽命的快速測(cè)量方法。該法具有不需使C-t瞬態(tài)曲線達(dá)到飽和、數(shù)據(jù)處理簡(jiǎn)單、且不需知道樣品的摻雜濃度等優(yōu)點(diǎn)。
-
關(guān)鍵詞:
- 半導(dǎo)體; 產(chǎn)生壽命
Abstract: A method for rapidly determining long generation lifetime under linear voltage sweep was presented. The C-t transient curve needs not to reach saturation. The data processing is simple. Furthermore, it needs not to know the sample s impurity density. -
Pierret R F. A linear-sweep MOS-C technique for determining minority carrier lifetimes. IEEE Trans. on Electron Devices, 1972, ED-19(7): 869-873.[2]包宗明,蘇九令.MOs電容法調(diào)硅的產(chǎn)生壽命和表面產(chǎn)生速度.物理學(xué)報(bào),1980, 29(6): 693-697.[3]張秀森.飽和電容法快速確定體產(chǎn)生壽命和表面產(chǎn)生速度.半導(dǎo)體學(xué)報(bào),1982, 3(2): 102-106.[4]張秀淼,丁扣寶.一種可用于直接計(jì)算產(chǎn)生壽命的產(chǎn)生區(qū)寬度模型.電子學(xué)報(bào),1993,21(5): 43-46. -
計(jì)量
- 文章訪問(wèn)數(shù): 2198
- HTML全文瀏覽量: 111
- PDF下載量: 377
- 被引次數(shù): 0