GaInAsP/InP雙異質(zhì)結(jié)液相外延片的p-n結(jié)偏位
MISPLACED p-n JUNCTION IN D. H. GaInAsP/InP WAFER GROWN BY LPE
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摘要: 用掃描電鏡電子束感生電流法研究了GaInAsP/InP雙異質(zhì)結(jié)液相外延片的p-n結(jié)偏位問(wèn)題。認(rèn)為Zn沾污是偏位的主要原因之一。用控制Zn的摻入量或用Mg作p型摻雜劑均可制得正常的p-n結(jié)。用電化學(xué)c-v法測(cè)試了部分樣品,并與制管后發(fā)射光譜進(jìn)行比較,結(jié)果相同。
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關(guān)鍵詞:
Abstract: Misplaced p-n junetion in the LPE D. H. GaInAsP/InP wafer is investigated by scanning electron microscope and electron beam-induced current method. It is shown that one of the reasons for the misplaced p-n junetion is Zn contamination. By controlling doping level of p-type dopant Zn, or using Mg as p-type dopant, the correctly located p-n junetion is obtained. The locations of the p-n junetion of some samples are measured by electrochemical c-v method. The results obtained are consistent with the emission spectrum of the LED fabricated from the wafers. -
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